Band Engineering: Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals (Adv. Mater. 17/2019)

Abstract

In article number https://doi.org/10.1002/adma.201806562, Lin Wang, Wei Huang, and co‐workers describe the synthesis of PbI2 with a unique electronic structure down to the atomic scale by a solution method, and construct versatile interfacial semiconductors via band alignment engineering. As an illustrative example, MoS2, WS2, and WSe2 monolayers show completely distinct light–matter interactions when interfacing with PbI2, which may further widen their applications in on‐chip optoelectronic devices, such as light‐emitting diodes, photodetectors, and photovoltaic devices.

High Sensitive and Broadband Photodetectors Based on Hybrid PbI2 Nanosheet/CdSe Nanobelt

“…As shown in Figure a, PbI 2 has higher valence band and conduction band energy than CdSe NB, [ 56,57 ] which belongs to the typical Type‐II energy band. The excitons generated by absorption photons in PbI 2 are partially separated under the influence of built‐in potential and rapidly accumulate in CdSe through the process of charge transfer.…”

Halogen Engineering for Operationally Stable Perovskite Solar Cells via Sequential Deposition

“…One is adding PbBr 2 powder into PbI 2 solution and forming PbI 2 /PbBr 2 film, then spin coating FAI solution on it ( Figure 1 a). Unlike the layer structure of PbI 2 , PbBr 2 possess a bulk structure, which would impede the intercalation of organic amine halide during the second step and cause incomplete formation of perovskite materials (Figure a) . Another way is resolving FABr and MABr into FAI solution, then depositing on the PbI 2 film (Figure b).…”

Highly Reliable Van Der Waals Memory Boosted by a Single 2D Charge Trap Medium

“…The PbI 2 nanosheets (≈1–10 nm thick) can be simply and quickly prepared on SiO 2 /Si substrate using our previously reported solution‐processed method. [ 14 ] The mechanically exfoliated WSe 2 , WS 2 , and MoS 2 (≈1–5 nm thick) as the channel materials are combined with PbI 2 nanosheets by a dry transfer method, [ 15 ] as followed by the fabrication of Bi/Au electrodes for ohmic contact. [ 16 ] Detailed fabrication steps and related characterizations are presented in Figure S1 (Supporting Information); and the Experimental Section.…”

“…2D PbI 2 charge trap layer was fabricated with solution‐processed method reported in the previous work, [ 14 ] or thermal evaporation method. The thermal evaporation deposition of PbI 2 was carried out via a standard deposition system in a high vacuum (10 −6 torr).…”