Band Anticrossing in III-N-V Alloys

Shan, W.; Walukiewicz, W.; Yu, K. M.; Ager, Joel W.; Häller, E. E.; Geisz, John F.; Friedman, D. J.; Olson, J. M.; Kurtz, Sarah; Xin, H. P.; Tu, C. W.

doi:10.1002/1521-3951(200101)223:1<75::aid-pssb75>3.0.co;2-1

Cited by 128 publications

(64 citation statements)

References 37 publications

(70 reference statements)

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“…Also, there exists an inconsistency in the coupling matrix element, VMN, between what was derived from the band gap pressure dependence and from composition dependence [8,26]. An extended version of this model with the k-space dispersion included is also problematic [27]. First, it is conceptually wrong to view the nitrogen level as a dispersionless band in k-space.…”

Section: Discussionmentioning

confidence: 99%

Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP

et al. 2001

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Isoelectronic impurity nitrogen atoms have been found to generate a series of localized states in GaP and GaAs. These states can be either bound (within the band gap) or resonant (above the band gap) when in the dilute doping limit (roughly < 1019 cm−3 for GaP and < 1018 cm−3 for GaAs). With increasing nitrogen doping level, a shift of the absorption edge from the binary band gap has been observed for the so-called GaPN or GaAsN alloy. We discuss the similarity and dissimilarity between the two systems in the following aspects: (1) How does the nitrogen doping perturb the host band structure? (2) How do the nitrogen bound states evolve with increasing nitrogen doping level? (3) What are the dominant contributors to the band edge absorption? And (4) does a universal model exist for GaPN and GaAsN? Other issues that will be discussed are: how does one define the band gap for these materials, and what is the relevance of various theoretical band structure calculations to the experimentally measured parameters.

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Section: Discussionmentioning

confidence: 99%

Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP

et al. 2001

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“…We used the 3-band Kane Hamiltonian to investigate the band-edge electronic description of bulk InAs-GaAs, where the lattice mismatch is accommodated by biaxial compressive strain within the InAs layer. To model the GaNAs, we use the band-anti-crossing (BAC) model to explain the unusually strong band-gap reduction of GaAs through the replacement of only a few percent of the arsenic atoms by nitrogen Shan et al (2001); Weyers et al (1992). The good agreement between a 5-band (10 including spin) k.p and the BAC model, confirms the validity of this two band model at the band-edge O' Reilly et al (2002).…”

Section: The Short Period Super-latticementioning

confidence: 99%

SPSLs and Dilute-Nitride Optoelectronic Devices

Jalili¹

2011

Optoelectronics - Devices and Applications

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“…Therefore, the GaInNAsSb energy gap is determined in a similar way, as it has been done earlier for GaInNAs using the band anti-crossing (BAC) model. The RT value of the band gap of the Ga 1−x In x N y As 1−y material is taken from the BAC model in the following form (Shan et al 2001):…”

Section: The Gainnassb/ganas Quantum Wellmentioning

confidence: 99%

Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region

Sarzała

Nakwaski

2006

Opt Quant Electron

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Structure optimisation of a possible 1.5-µm GaAs-based vertical-cavity surface-emitting laser diode with the GaInNAsSb/GaNAs quantum-well active region r o b e r t p . s a r z a ł a a n d w ł o d z i m i e r z n a k wa s k Abstract. Structure optimisation of the GaAs-based GaInNAsSb/GaNAs quantum-well (QW) verticalcavity surface-emitting diode lasers (VCSELs) has been carried out using the comprehensive threedimensional self-consistent physical model of their room-temperature (RT) continuous-wave (CW) threshold operation. The model has been applied to investigate a possibility to use these devices as carrier-wave lasing sources in the third-generation optical-fibre communication. In this simulation, all physical (optical, electrical, thermal and gain) phenomena crucial for a laser operation including all important interactions between them are taken into consideration. As expected, the 1.5λ-cavity VCSEL has been found to demonstrate the lowest RT CW threshold. However, for many VCSEL applications, the analogous VCSEL equipped with a longer 3λ-cavity should be recommended because it exhibits only slightly higher threshold but manifest much better mode selectivity -the desired single-fundamental-mode operation has been preserved in these devices up to at least 380 K. The Auger recombination has been found to be decidedly the main reason of the threshold current increase at higher temperatures. A proper initial red detuning of the resonator wavelength with respect to the gain spectrum may drastically decrease CW lasing thresholds, especially at higher temperatures.

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Band Anticrossing in III-N-V Alloys

Cited by 128 publications

References 37 publications

Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP

Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP

SPSLs and Dilute-Nitride Optoelectronic Devices

Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region

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