Band alignment of type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 van der Waals heterostructures for highly enhanced photoelectric responses

Luo, Mingwei; Lu, Chunhui; Liu, Yuqi; Han, Taotao; Ge, Yanqing; Zhou, Yixuan; Xu, Xinlong

doi:10.1007/s40843-021-1820-y

Cited by 29 publications

(36 citation statements)

References 56 publications

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“…The blueshift of peak positions indicates the electronic−phonon coupling between MoS 2 and Ta 2 NiSe 5 . 38 Figure 3b shows the peak position maps of E 2g 1 of MoS 2 , further confirming slight softening of the heterostructure because of the effect of Ta 2 NiSe 5 . In addition, the Raman mapping of MoS 2 (382.7 cm −1 ) also indicates that each component is highly homogeneous, demonstrating the high crystal quality of the junction region 39 (Figure S3b).…”

Section: ■ Results and Discussionmentioning

confidence: 63%

“…Compared with the pure MoS 2 , the vibration modes of the junction (E 2g 1 , A 1g ) are softened by ∼1.5 and ∼1.0 cm –1 (Figure a). The blueshift of peak positions indicates the electronic–phonon coupling between MoS 2 and Ta 2 NiSe 5 Figure b shows the peak position maps of E 2g 1 of MoS 2 , further confirming slight softening of the heterostructure because of the effect of Ta 2 NiSe 5 .…”

Section: Resultsmentioning

confidence: 75%

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High-Gain MoS₂/Ta₂NiSe₅ Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

Guo

Song

Wei

et al. 2022

ACS Appl. Mater. Interfaces

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Emerging two-dimensional narrow band gap materials with tunable band gaps and unique electrical and optical properties have shown tremendous potential in broadband photodetection. Nevertheless, large dark currents severely hinder the performance of photodetectors. Here, a MoS2/Ta2NiSe5 van der Waals heterostructure device was successfully fabricated with a high rectification ratio of ∼104 and an ultralow reverse bias current of the pA level. Excitingly, the charge transfer and the generation of the built-in electric field of heterostructures have been proved by theory and experiment, which effectively suppress dark currents. The dark current of the heterostructure reduces by nearly 104 compared with the pure Ta2NiSe5 photodetector at V ds = 1 V. The MoS2/Ta2NiSe5 device exhibits excellent photoelectric performance with the maximum responsivity of 515.6 A W–1 and 0.7 A W–1 at the wavelengths of 532 and 1064 nm under forward bias, respectively. In addition, the specific detectivity is up to 3.1 × 1013 Jones (532 nm) and 2.4 × 109 Jones (1064 nm). Significantly, the device presents an ultra-high gain of 6 × 107 and an exceptional external quantum efficiency of 1.2 × 105% under 532 nm laser irradiation. The results reveal that the MoS2/Ta2NiSe5 heterostructure provides an essential platform for the development and application of high-performance broadband optoelectronic devices.

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Section: ■ Results and Discussionmentioning

confidence: 63%

Section: Resultsmentioning

confidence: 75%

High-Gain MoS₂/Ta₂NiSe₅ Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

Guo

Song

Wei

et al. 2022

ACS Appl. Mater. Interfaces

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“…Its two adjacent diatomic layers bind together by weak van der Waals interaction, which is similar to other transition-metal-dichalcogenide semiconductors such as MoS 2 and WSe 2 . [14][15][16][17][18] Consequently, benefiting from the existence of Dirac surface state on TCI phase SnSe crystal, it is advantageous to realize the predominated transport of surface carriers with no backscattering and higher mobility. [19][20][21][22] Whereas, for the SnSe crystal with orthorhombic lattice structure, it is favorable for the layer-by-layer growth pattern.…”

mentioning

confidence: 99%

Ultrasensitive and Self‐Powered SnSe/Ge Heterojunction Photodetector Driven by Spontaneously Interfacial Excitation Transfer of Carriers

Zhang

Liu

et al. 2022

Adv Materials Inter

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To date, the pure-phase SnSe films and nanostructures have been experimentally prepared by means of chemical vapor deposition, mechanical exfoliation, onestep solvothermal method, hot-injection method, and so on. [5][6][7] It was also confirmed that by using of different growth technics or conditions, the SnSe crystals with different phases can be realized. [8][9][10] It turned out that the SnSe crystal with cubic rock-salt structure should belong to the prototypical 3D topological crystalline insulator (TCI) phase. [11][12][13] While, for the SnSe crystal with orthorhombic structure, it was identified as the typical 2D layered semiconductor. Its two adjacent diatomic layers bind together by weak van der Waals interaction, which is similar to other transition-metal-dichalcogenide semiconductors such as MoS 2 and WSe 2 . [14][15][16][17][18] Consequently, benefiting from the existence of Dirac surface state on TCI phase SnSe crystal, it is advantageous to realize the predominated transport of surface carriers with no backscattering and higher mobility. [19][20][21][22] Whereas, for the SnSe crystal with orthorhombic lattice structure, it is favorable for the layer-by-layer growth pattern. This can help to create SnSerelated heterojunctions with sharp interfaces. [23][24][25][26] Significantly, the absence of surface nonsaturated dangling bonds between adjacent two SnSe layers enables to reduce the spontaneous annihilation of photo excitons when used in heterojunction devices. This advantage offers a great opportunity for designing original optoelectronic devices with higher quantum efficiency as well.Note that the layered SnSe film as an absorber layer can achieve a higher optical absorption coefficient of ≈10 5 cm −1 , which is much larger than that of traditional Si or GaAs semiconductors by about two orders of magnitude. [5,[27][28][29][30] Furthermore, the specific band-gap of layered SnSe film was approximately 0.9 eV. This suggests that a thin layer of SnSe film could be sufficient to absorb a wide range of light, and generate a large amount of long-lived photoexcitons. Thus, owing to the excellent characteristics of light absorption and band-gap, the 2D layered SnSe crystalline film has become a suitable semiconductor for photodetection application. Compared to the exotic TCI phase SnSe crystal, the nondissipative surface electron transport with

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“…Therefore, constructing SnS 2 /MoS 2 heterostructures with special morphology is expected to enhance light absorption. High-density vertically oriented SnS 2 nanosheet arrays 30 and monolayer MoS 2 nanosheets 31 can be obtained by vdW epitaxial growth. Such complementarity in SnS 2 and MoS 2 is expected for designing self-powered PEC photodetectors with outstanding photodetection performances.…”

Section: Introductionmentioning

confidence: 99%

Vertically oriented SnS₂ on MoS₂ nanosheets for high-photoresponsivity and fast-response self-powered photoelectrochemical photodetectors

Liu

Luo

et al. 2022

Nanoscale Horiz.

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Band alignment of type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 van der Waals heterostructures for highly enhanced photoelectric responses

Cited by 29 publications

References 56 publications

High-Gain MoS₂/Ta₂NiSe₅ Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

High-Gain MoS₂/Ta₂NiSe₅ Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

Ultrasensitive and Self‐Powered SnSe/Ge Heterojunction Photodetector Driven by Spontaneously Interfacial Excitation Transfer of Carriers

Vertically oriented SnS₂ on MoS₂ nanosheets for high-photoresponsivity and fast-response self-powered photoelectrochemical photodetectors

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Band alignment of type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 van der Waals heterostructures for highly enhanced photoelectric responses

Cited by 29 publications

References 56 publications

High-Gain MoS2/Ta2NiSe5 Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

High-Gain MoS2/Ta2NiSe5 Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

Ultrasensitive and Self‐Powered SnSe/Ge Heterojunction Photodetector Driven by Spontaneously Interfacial Excitation Transfer of Carriers

Vertically oriented SnS2 on MoS2 nanosheets for high-photoresponsivity and fast-response self-powered photoelectrochemical photodetectors

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Product

Resources

About

High-Gain MoS₂/Ta₂NiSe₅ Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

High-Gain MoS₂/Ta₂NiSe₅ Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

Vertically oriented SnS₂ on MoS₂ nanosheets for high-photoresponsivity and fast-response self-powered photoelectrochemical photodetectors