Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching

Özçelik, V. Ongun; Azadani, Javad G.; Yang, Ce; Koester, Steven J.; Low, Tony

doi:10.1103/physrevb.94.035125

Cited by 372 publications

(225 citation statements)

References 82 publications

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“…Moreover, negative differential resistance at low temperature is observed . Figure a demonstrates the corresponding band alignment . Kang et al have calculated the band alignments of various monolayer TMDs, as shown in Figure b .…”

Section: Tmd Heterostructuresmentioning

confidence: 99%

Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

et al. 2018

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2D transition‐metal dichalcogenides (TMDs), which exhibit fascinating and fantastic properties, have promising applications in future electronic devices and photoelectric devices. Here, the recent research on 2D TMDs is summarized, including single components, 2D doped TMDs, and 2D van der Waals heterostructures. The physical picture, synthetic methods, and optoelectronic properties of these 2D materials are comprehensively described. Opportunities and emerging applications of 2D materials in the future are briefly discussed.

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Section: Tmd Heterostructuresmentioning

confidence: 99%

Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

et al. 2018

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“…The applications in increasingly extensive fields demand the discovery of novel 2D semiconductors with particular properties . For example, most 2D semiconductors that have been studied possess small bandgaps, while the applications for 2D light‐emitting diodes (LEDs) with blue or UV light emission, formation of van der Waals type‐I heterojunctions, and quantum wells call for materials with a larger bandgap . Gallium(II) sulfide (GaS), a member of the group‐III monochalcogenide layered materials, is one such semiconductor with a wide bandgap but scarcely explored .…”

mentioning

confidence: 99%

Controlling Defects in Continuous 2D GaS Films for High‐Performance Wavelength‐Tunable UV‐Discriminating Photodetectors

Yang

Chen

et al. 2020

Advanced Materials

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A chemical vapor deposition method is developed for thickness‐controlled (one to four layers), uniform, and continuous films of both defective gallium(II) sulfide (GaS): GaS0.87 and stoichiometric GaS. The unique degradation mechanism of GaS0.87 with X‐ray photoelectron spectroscopy and annular dark‐field scanning transmission electron microscopy is studied, and it is found that the poor stability and weak optical signal from GaS are strongly related to photo‐induced oxidation at defects. An enhanced stability of the stoichiometric GaS is demonstrated under laser and strong UV light, and by controlling defects in GaS, the photoresponse range can be changed from vis‐to‐UV to UV‐discriminating. The stoichiometric GaS is suitable for large‐scale, UV‐sensitive, high‐performance photodetector arrays for information encoding under large vis‐light noise, with short response time (<66 ms), excellent UV photoresponsivity (4.7 A W–1 for trilayer GaS), and 26‐times increase of signal‐to‐noise ratio compared with small‐bandgap 2D semiconductors. By comprehensive characterizations from atomic‐scale structures to large‐scale device performances in 2D semiconductors, the study provides insights into the role of defects, the importance of neglected material‐quality control, and how to enhance device performance, and both layer‐controlled defective GaS0.87 and stoichiometric GaS prove to be promising platforms for study of novel phenomena and new applications.

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“…Mater. [128] When they are stacked layerby-layer to construct a vdW HJ, the k-point mismatch in the whole structure is hard to be compensated. a) Band-diagrams of the HET at off-and on-states.…”

Section: Emerging Challengesmentioning

confidence: 99%

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

Qin

Wang

et al. 2018

Adv Elect Materials

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Since the continuous scaling down of the transistor channel length, extraordinary improvement is achieved in the switching speed. However, the rising leakage current degrades the power consumption seriously. In this regard, reducing supply voltage might be the most effective method. This requirement can be fulfilled well by tunnel field‐effect transistors (TFETs), because carriers transport via a band‐to‐band tunneling manner in the TFETs. Relying on the special transport mechanism, the TFETs often require band structure modulations and steep interfaces without trap state, which are challenging for bulk materials. Therefore, these challenges have boosted TFET designs based on low‐dimensional materials ranging from Si/Ge nanowires to state‐of‐art van der Waals heterostructures. Here, the key concepts of the currently developed TFETs are studied from the aspects of structure, material, transportation characteristic, and mechanism. According to the heterojunction bonding types, they can be divided into lateral and vertical TFETs in general. Furthermore, other related transistors based on tunneling are also included. Emerging problems and promotion methods toward these TFETs are introduced with the assistance of simulations. The main goal is to introduce the frontiers of TFET explorations and provide readers with a perspective on how to realize TFET applications in the future.

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Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching

Cited by 372 publications

References 82 publications

Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

Controlling Defects in Continuous 2D GaS Films for High‐Performance Wavelength‐Tunable UV‐Discriminating Photodetectors

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

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