Band alignment of Al2O3 with (−201) β-Ga2O3

Carey, Patrick H.; Ren, F.; Hays, David C.; Gila, B. P.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito

doi:10.1016/j.vacuum.2017.05.006

Cited by 59 publications

(30 citation statements)

References 43 publications

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“…Therefore, the ΦB is determined to be 2.3 eV for the Al2O3/β-Ga2O3 (001) heterojunction based on equation ( 2). It agrees with the previously reported value deduced via an X-ray photoelectron spectroscopy technique [31]. The large ∆EC for the Al2O3/β-Ga2O3 (001) could explain the low J for the MIS capacitor.…”

Section: Resultssupporting

confidence: 92%

Low Interface Trapped Charge Density for AlO/β-GaO (001) Metal-Insulator-Semiconductor Capacitor

Zhang

Shen

Liu

et al. 2022

IEEE J. Electron Devices Soc.

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In this letter, high-performance Al2O3/β-Ga2O3 (001) metal-insulator-semiconductor (MIS) capacitor has been demonstrated. The capacitance-voltage (C-V) curves of the Al2O3/β-Ga2O3 (001) MIS capacitor remain stable under different measurement frequencies. The leakage current density is lower than 2.0 × 10 -8 A/cm 2 when the gate voltage is in the range of -5~13 V. The fixed charge and trapped charge densities in Al2O3 film are 4.4 × 10 12 and 6.0 × 10 11 cm -2 , respectively. Average and minimum interface trapped charge density (Dit) for Al2O3/β-Ga2O3 (001) interface has been extracted to be as low as 3.3 × 10 11 and 2.3 × 10 11 cm -2 eV -1 via the Terman method, respectively. The low Dit is probably attributed to the modification of vacancy defects and the introduction of hydroxyl groups at the Al2O3/β-Ga2O3 (001) interface after piranha solution pretreatment for β-Ga2O3.

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Section: Resultssupporting

confidence: 92%

Low Interface Trapped Charge Density for AlO/β-GaO (001) Metal-Insulator-Semiconductor Capacitor

Zhang

Shen

Liu

et al. 2022

IEEE J. Electron Devices Soc.

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“…Furthermore, the band discontinuities between b-Ga 2 O 3 /Al 2 O 3 and b-Ga 2 O 3 /LaAl 2 O 3 were also identified. 22,23 In this paper, we report the growth of b-Ga 2 O 3 on the AlN/sapphire template by PLD to form a b-Ga 2 O 3 /AlN heterojunction. First of all, the lattice mismatch between the (À201) plane of b-Ga 2 O 3 and the (0002) plane of AlN is elaborated.…”

mentioning

confidence: 99%

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

Sun

Castanedo

Liu

et al. 2017

Applied Physics Letters

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“…It has been found that the deposition method can have a very significant effect on the band alignment. [55][56][57][58][59][60] There are often variations in reported valence band offsets for dielectrics on semiconductors and some of the reasons documented include metal or carbon contamination, interfacial disorder, variations in dielectric composition, thermal conditions, strain, and surface termination effects. [59] Figure 10 shows there are differences of up to 1 eV in band alignments for SiO 2 and Al 2 O 3 on Ga 2 O 3 and (Al 0.14 Ga 0.86 ) 2 O 3 , depending on whether they are deposited by sputtering or Atomic Layer Deposition.…”

Section: Gate Dielectrics For Mos Gatesmentioning

confidence: 99%