Band alignment in ZnCdTe/ZnTe and ZnCdSe/ZnSe SQW structures grown on GaAs(100) by MBE

Kozlovsky, V. I.; Sadofyev, Yu. G.; Litvinov, V. G.

doi:10.1088/0957-4484/11/4/310

Cited by 11 publications

(4 citation statements)

References 18 publications

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“…Several physical and chemical techniques have been used to synthesize CdZnTe thin films such as sputtering [5], molecular beam epitaxy [6,9,10], vacuum evaporation [11][12][13], co-evaporation [14], metal-organic chemical vapor deposition [15,16], multilayer method [17], hot-wall evaporation technique [18], electrodeposition [3,19], pulse plating technique [20] and radio frequency magnetron sputtering [21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Air-stable Cd0.23Zn0.77Te nanostructure thin films

Zawawi

Mahdy

2014

J Mater Sci: Mater Electron

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Air-stable CdZnTe nanostructure thin films were synthesized by inert gas condensation technique under constant preparation conditions of Argon gas flow, deposition rate and substrate temperature 300 K. The CdZnTe nanostructure thin films were deposited on freshly cleaned glass substrates. The film thickness has been raised from 20 to 70 nm. The films exhibited nanocrystalline single phase cubic structure as indicated by grazing incident in-plane X-ray diffraction patterns and ensured by HRTEM diffraction patterns. The average particle size of examined films was increased from 5.6 to 10.6 nm by raising thin film thickness as determined from HRTEM images. The average particle size of examined film was measured by HRTEM after 230 day aging and shows a relative stability in the particle size. The optical transmission, reflection and absorption spectra were influenced by the increasing of the particle size P s . The optical band gap E g decreased from 3.24 to 3.05 eV as average particle size enlarged from 5.6 to 10.6 nm. Higher values of absorption coefficient spectra and refractive indices have been observed for films of higher particle size. Relative stability of optical properties has been detected for aged film. The d.c. electrical conductivity behavior at different temperatures was tuned by changing the particle size of examined nanocrystalline films. The activation energy values are in the range 0.67-0.77 eV regardless the change in particle size.

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Section: Introductionmentioning

confidence: 99%

Air-stable Cd0.23Zn0.77Te nanostructure thin films

Zawawi

Mahdy

2014

J Mater Sci: Mater Electron

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“…where k B is the Boltzmann constant, h is the Plank constant, L b is the ZnSe barrier thickness, DE c % 0.7 DE g [9] is the conduction band offset of the ZnCdSe/ZnSe heterostructure and r is the density of nonequilibrium carriers. Analogously, a chemical potential F h was determined.…”

Section: Model and Discussionmentioning

confidence: 99%

E-Beam Longitudinally Pumped Laser Based on ZnCdSe/ZnSe MQW Structure Grown by MBE on ZnSe(001) Substrate

Kozlovsky

Korostelin

Popov

et al. 2002

phys. stat. sol. (b)

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Electron beam longitudinally pumped laser based on 15 ZnCdSe/ZnSe QW periodic-gain structure grown by molecular beam epitaxy on ZnSe(001) substrate was studied. An output power of 0.3 W was achieved. The laser wavelength was in 518-536 nm range, being at the short wavelength side of the QW emission line at low excitation level. Such unusual feature was explained by the participation of excited QW levels in the creation of the optical gain.

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“…Using XPS, Kowalczyk et al [75] determined the band offsets in the InAs/GaAs (100) Using XPS, Kowalczyk et al [75] determined the band offsets in the InAs/GaAs (100) …”

Section: (D) Gainas/gaasmentioning

confidence: 99%

“…The band offsets in the Zn x Cd 1Àx Se/ZnSe heterostructure were determined using various techniques, such as optical absorption [96], reflectance [97], electrical conductivity and intersubband absorption [98], PLE [99] and CL and DLTS [100]. These data gave a band-offset ratio which varied from DE c : DE v ¼ 67 : 33 to 87 : 13.…”

Section: Ii-vi Semiconductor Heterostructure Systemmentioning

confidence: 99%

Heterojunction Band Offsets and Schottky Barrier Height

Adachi

2009

Properties of Semiconductor Alloys

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One of the most important parameters for the design and analysis of heterojunction and QW electronic and optoelectronic devices is the heterojunction band offset. The band offset is a consequence of the difference between the band-gap energies of two semiconductors. As shown in Figure 9.1, the energy difference is distributed between a CB offset DE c and a VB offset DE v . In a type I (straddling lineup), we obtainwhile for type II (broken-gap and staggered lineups) the relationship is given bywhere DE g ¼ jE g1 À E g2 j is the band-gap energy difference.Since the temperature variations of the band-gap energies are very similar among various semiconductors [1], the band offsets and offset ratio can usually be assumed to be independent of temperature. Group-IV Semiconductor Heterostructure System (a) CSi/SiThe C x Si 1Àx /Si heterostructure shows a biaxial tensile strain in the alloy layer. The biaxial strain or stress in the coherently strained QW layers splits the LH and HH bands so that the LH band is highest in C x Si 1Àx layer. Similarly, for C x Si 1Àx layers with smaller x compositions, the lowest CB is at the X (D) band. Brunner et al.[2] measured near-band-edge emission from pseudomorphic C x Si 1Àx /Si QW structures with x up to $2 at%. They found a linear decrease in the PL emission peak with increasing x, which is about 30% larger than the expected band-gap reduction induced by strain. This might indicate that incorporation of C reduces the intrinsic band-gap energy. The trend for decreasing C x Si 1Àx band-gap energy was also proposed by detailed binding calculations [3].The band-offset values for C x Si 1Àx /Si heterostructure have been determined experimentally by several authors [4,5]. Houghton et al.[4] confirmed a type-I alignment in C x Si 1Àx /Si with x ¼ 0.5 À 1.7 at% and also observed an elastic-strain-induced transition from type I to type II in Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors Sadao AdachiC x Si 1Àx /Si QWs. The band-offset ratio obtained by these authors is DE c : DE v ¼ 65 : 35 with E g (Si) ! E g (C x Si 1Àx ). Williams et al. [5] also obtained a band-offset ratio of about 70 : 30 for x ¼ 0.5 À 1.7 at%. The corresponding band lineup is shown schematically in Figure 9.2(a). An ab initio calculation confirms the offset ratio of 70 : 30 [6]. (b) SiGe/SiPrevious studies on the band alignment of the Si x Ge 1Àx /Si heterostructure suggest type-I [7,8] or type-II behavior [9-12]. By employing a wafer bending technique, Thewalt et al. [11] observed both type-I and type-II behaviors respectively, in PL of an UHV-CVD-grown Si 0.7 Ge 0.3 /Si(100) QW at high and low laser powers. They concluded that a determination of type-I alignment [7,8] is a result of the band-bending effects due to high excitation. More recently, Cheng et al. [12] made PL measurements on UHV-CVD-grown and MBE-grown Si x Ge 1Àx /Si MQWs and concluded that the band alignment was type II with DE c ¼ 0.3DE g and DE v ¼ 1.3DE g , as shown in Figure 9.2(b). (c) CSiGe/Si Patel et al. [18] o...

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Band alignment in ZnCdTe/ZnTe and ZnCdSe/ZnSe SQW structures grown on GaAs(100) by MBE

Cited by 11 publications

References 18 publications

Air-stable Cd0.23Zn0.77Te nanostructure thin films

Air-stable Cd0.23Zn0.77Te nanostructure thin films

E-Beam Longitudinally Pumped Laser Based on ZnCdSe/ZnSe MQW Structure Grown by MBE on ZnSe(001) Substrate

Heterojunction Band Offsets and Schottky Barrier Height

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