Band alignment in Ga<i>x</i>In1−<i>x</i>P/InP heterostructures

Bensaada, A.; Graham, Joseph; Brebner, J. L.; Chennouf, A.; Cochrane, R. W.; Leonelli, R.; Masut, R. A.

doi:10.1063/1.111178

Cited by 17 publications

(7 citation statements)

References 6 publications

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“…The conduction band energy of In 0.81 Ga 0.19 P is higher than that of InP and introduces a barrier in the conduction band. This barrier is about 50 meV at 4 K [11] and can be estimated to be close to that value at room temperature using the model-solid theory [12]. The light-hole band gap energy of In 0.81 Ga 0.19 P coherently strained to InP is almost the same as that of InP and the splitting between the light-hole and heavy-hole valence bands is about 100 meV.…”

Section: Introductionsupporting

confidence: 67%

Study of temperature effects on loss mechanisms in laser diodes with electron stopper layer

Abraham¹,

Piprek²,

DenBaars³

et al. 1999

Semicond. Sci. Technol.

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The importance of the electron loss from the separate confinement layer (SCL) to the p-cladding in 1.5 µm lasers is analysed comparing two structures. One is a regular structure with strained InGaAsP quantum wells and a 1.15 µm emitting InGaAsP SCL and the second one incorporates an additional In 0.81 Ga 0.19 P electron stopper layer (about 50 meV high) at the interface between the p-cladding and the SCL. The results are analysed using comprehensive simulation software. It is shown that the current leakage at the SCL p-cladding interface is not the dominant loss phenomenon at room temperature. Instead, the inhomogeneity of the carrier injection over the QWs is identified as being mainly responsible for the non-unit internal quantum efficiency. The inhomogeneity increases above threshold with the current injection and produces increasing carrier recombination losses. However, at higher temperature (above 60 • C) the additional In 0.81 Ga 0.19 P electron stopper layer is efficient to decrease the electron leakage from the SCL to the p-cladding. It is also shown that besides the beneficial effect of improving the internal quantum efficiency at high temperature the electron stopper layer also slightly increases the threshold current by increasing the carrier density and the absorption loss in the SCL. Finally, our measurements show that above a critical temperature (97 • C in this case) the SCL absorption loss increases dramatically.

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Section: Introductionsupporting

confidence: 67%

Study of temperature effects on loss mechanisms in laser diodes with electron stopper layer

Abraham¹,

Piprek²,

DenBaars³

et al. 1999

Semicond. Sci. Technol.

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“…In particular, optical modulators 4 -8 and strained-layer quantum well lasers 9,10 have been demonstrated in this system. Of primary importance in the design of quantum well devices based on these structures are the structural control 2,11 and material parameters, such as band gap and band offset, [12][13][14] which represent the basis of band-gap engineering.…”

Section: Introductionmentioning

confidence: 99%

Self-consistent determination of the band offsets inInAsxP1−x/
Beaudoin
¹
,
Bensaada
²
,
Leonelli
³

et al. 1996
Phys. Rev. B
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54
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21
0
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Low-and room-temperature optical absorption spectra are presented for a series of InAs x P 1Ϫx /InP strainedlayer multiple quantum well structures ͑0.11 рxр0.35͒ grown by low-pressure metal-organic vapor phase epitaxy using trimethylindium, tertiarybutylarsine, and phosphine as precursors. The well widths and compositions in these structures are exactly determined from the use of both high-resolution x-ray diffraction and transmission electron microscopy on the same samples. The absorption spectra are then analyzed by selfconsistently fitting, for the five samples, the excitonic peak energy positions with transition energies determined from a solution to the Schrödinger equation in the envelope function formalism using the well-known Bastard/Marzin model ͓J. Y. Marzin et al., in Semiconductors and Semimetals, edited by Thomas P. Pearsall, ͑Academic, New York, 1990͒, Vol. 32, p. 56͔. From these self-consistent fits, both the bowing parameter of bulk unstrained InAs x P 1Ϫx and the band offsets of the heterostructures are deduced self-consistently. The conduction-band offsets thus determined represent 75%Ϯ3% of the total strained band-gap differences at both low ͑liquid He͒ and room temperatures. These values of the band offsets are consistent with the predictions of the quantum dipole model ͓J. Tersoff, Phys. Rev. B 30, 4874 ͑1984͔͒. The values determined for the bowing parameters are found to differ slightly between 0.10Ϯ0.01 eV at low temperature and 0.12Ϯ0.01 eV at room temperature.

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“…The composite InP/GaInP emitter is doped at a level of 2.5 © 10 16 cm ¹3 , and consists of a 15-nm-thick Ga y In 1¹y P:Si layer and a 5-nm-thick InP:Si layer. [7][8][9] The first 5 nm of the ternary alloy has y = 0.22, which is followed by a grading to y = 0 over 10 nm. The composite emitter is followed by a 130-nm-thick InP:Si emitter layer doped at 1.5 © 10 19 cm ¹3 .…”

mentioning

confidence: 99%

Type-II InP/GaAsSb double-heterojunction bipolar transistors withf_MAX> 700 GHz

Flückiger¹,

Lovblom²,

Alexandrova³

et al. 2014

Appl. Phys. Express

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The “type-II” staggered band lineup at the base-collector junction of InP/GaAsSb double-heterojunction bipolar transistors (DHBTs) eliminates the current blocking effect observed in InP/GaInAs DHBTs and allows the use of a pure binary InP collector that provides a high breakdown voltage and good thermal conductivity. Improvement of the power gain cutoff frequency fMAX requires a reduction in base resistance and/or base-collector capacitance. We have decreased the base contact resistivity by in situ Ar sputtering immediately prior to the base contact deposition. The resulting DHBTs simultaneously feature fT = 429 GHz and fMAX = 715 GHz. To the best of the authors’ knowledge, this is the highest reported fMAX for InP/GaAsSb-based DHBTs to date.

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Band alignment in GaxIn1−xP/InP heterostructures

Cited by 17 publications

References 6 publications

Study of temperature effects on loss mechanisms in laser diodes with electron stopper layer

Study of temperature effects on loss mechanisms in laser diodes with electron stopper layer

Self-consistent determination of the band offsets inInAsxP1−x/
Beaudoin
¹
,
Bensaada
²
,
Leonelli
³

et al. 1996
Phys. Rev. B
Self Cite
54
4
21
0
View full text Add to dashboard Cite

Type-II InP/GaAsSb double-heterojunction bipolar transistors withf_MAX> 700 GHz

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Band alignment in GaxIn1−xP/InP heterostructures

Cited by 17 publications

References 6 publications

Study of temperature effects on loss mechanisms in laser diodes with electron stopper layer

Study of temperature effects on loss mechanisms in laser diodes with electron stopper layer

Self-consistent determination of the band offsets inInAsxP1−x/Beaudoin1, Bensaada2, Leonelli3 et al. 1996Phys. Rev. BSelf Cite544210View full textAdd to dashboardCite

Type-II InP/GaAsSb double-heterojunction bipolar transistors withfMAX> 700 GHz

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About

Self-consistent determination of the band offsets inInAsxP1−x/
Beaudoin
¹
,
Bensaada
²
,
Leonelli
³

et al. 1996
Phys. Rev. B
Self Cite
54
4
21
0
View full text Add to dashboard Cite

Type-II InP/GaAsSb double-heterojunction bipolar transistors withf_MAX> 700 GHz