Balanced AlGaN/GaN HEMT cascode cells: design method for wideband distributed amplifiers

Martin, Audrey; Reveyrand, Tibault; Campovecchio, Michel; Aubry, R.; Piotrowicz, S.; Floriot, D.; Quéré, Raymond

doi:10.1049/el:20083128

Cited by 10 publications

(6 citation statements)

References 8 publications

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“…Various amplifiers with cascode cells have been proposed in the literature mainly in order to obtain either a wide band [5][6][7] or a high gain at very high frequencies, especially for GaN HEMT technology [8]. However, no attempts have been made with integrated stability resistance and capacities between gate fingers.…”

Section: A) Cascode Cell Topologymentioning

confidence: 99%

Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers

Déchansiaud

Sommet²,

Reveyrand³

et al. 2013

Int. J. Microw. Wireless Technol.

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International audienceThis paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called "integrated cascode" has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors

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Section: A) Cascode Cell Topologymentioning

confidence: 99%

Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers

Déchansiaud

Sommet²,

Reveyrand³

et al. 2013

Int. J. Microw. Wireless Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Various amplifiers with cascode cells have been proposed in litterature mainly in order to obtain either a wide band [4] [5] [6], or a high gain at very high frequencies, especially for GaN HEMT technology [7]. However no attempts have been made with integrated stability resistance and capacities between gate fingers.…”

Section: A Cascode Cell Topologymentioning

confidence: 99%

Design of an Integrated cascode cell for compact Ku-band power amplifiers

Déchansiaud

Sommet

Reveyrand

et al. 2012

2012 42nd European Microwave Conference

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This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called "'integrated cascode"' has been designed in order to propose a strong decrease in term of circuit size for Power Amplifier (PA). The technology used relies on 0.25-μm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists to obtain, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate development. In order to design a 2W amplifier, we have used two 12x100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate development exhibits a vertical size of 790 μm. Therefore the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows to decrease the MMIC amplifier area of 40 % compared with amplifier based on single transistors.

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“…We have chosen to design several kinds of cascode cells [4] [5] [6]. Indeed, these one are more compact than a single transistor with the same gate development, or than a fishbone cell.…”

Section: Principe Of Innovative Cascode Cell Designmentioning

confidence: 99%