Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation

Desplats, Romain; Beaudoin, Félix; Perdu, Philippe; Poirier, Patrick; Trémouilles, David; Bafleur, Marise; Lewis, Dean

doi:10.1016/s0026-2714(01)00167-6

Cited by 20 publications

(9 citation statements)

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“…Because of the reflection of the front-side metal layer, it is difficult for the laser to reach deep levels from the front side of the device. Backside laser irradiation has proven to be an effective method [8,11]. In TLS, a continuous infrared laser (wavelength of 1.3 µm) is used to scan the back-side silicon substrate for two reasons,…”

Section: Classical Modelmentioning

confidence: 99%

“…where k = κ ρc and η(t − t ) is the step (Heaviside) function. Using Equations (8) and (11) in Equation (10), we can obtain: When the laser beam is focused on the abnormal spot or the normal spot of the DUT, a temperature variation ∆T that meets Equation 12is formed. The variation of resistance ∆R and the Seebeck voltage ∆V S are respectively:…”

Section: B Comprehensive Modelmentioning

confidence: 99%

“…However, TLS still has some limitations. Because of the high reflectivity of the metal layer to the laser, it is difficult for TLS to locate a defect at a deep level [8]. In 2017, a modified technology called Lock-in TLS was proposed to locate the defect in multilevel interconnects [9].…”

Section: Introductionmentioning

confidence: 99%

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Preliminary Study on the Model of Thermal Laser Stimulation for Defect Localization in Integrated Circuits

et al. 2020

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Thermal Laser Stimulation (TLS) is an efficient technology for integrated circuit defect localization in Failure Analysis (FA) laboratories. It contains Optical Beam-Induced Resistance Change (OBIRCH), Thermally-Induced Voltage Alteration (TIVA), and Seebeck Effect Imaging (SEI). These techniques respectively use the principle of laser-induced resistance change and the Seebeck effect. In this paper, a comprehensive model of TLS technology is proposed. Firstly, the model presents an analytical expression of the temperature variation in Integrated Circuits (IC) after laser irradiation, which quantificationally shows the positive correlation with laser power and the negative correlation with scanning velocity. Secondly, the model describes the opposite influence of laser-induced resistance change and the Seebeck effect in the device. Finally, the relationship between the current variation measured in the experiment and other parameters, especially the voltage bias, is well explained by the model. The comprehensive model provides theoretical guidance for the efficient and accurate defect localization of TLS technology.

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Section: Classical Modelmentioning

confidence: 99%

Section: B Comprehensive Modelmentioning

confidence: 99%

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Preliminary Study on the Model of Thermal Laser Stimulation for Defect Localization in Integrated Circuits

et al. 2020

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“…OBIRCH has shown to be able to detect a wide range of current related defects such as metallic and polysilicon shorts, gate oxide shorts, resistive opens, and ESD damages in silicon [4,5].…”

Section: Obirch Techniquementioning

confidence: 99%

OBIRCH analysis of electrically stressed advanced graphic ICs

Liao

Marks

Beaudoin³

2007

Microelectronics Reliability

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“…Source Amplifier OBIRCH [6,18] IR-OBIRCH [7,19] Voltage Current CC-OBIRCH [20] TIVA [21] Current Voltage TBIP [22] XIVA [23] Voltage Voltage SEI [12] Current or no bias voltage Recent progress in the static Thermal Laser Stimulation includes the introduction of lock-in detection. In these applications the laser beam is pulsed or modulated at a stable frequency and lock-in detection is used to measure the small variation induce by the laser stimulation.…”

Section: Techniquesmentioning

confidence: 99%

Dynamic Thermal Laser Stimulation Theory and Applications

Sanchez

Desplats

Beaudoin

et al. 2006

2006 IEEE International Reliability Physics Symposium Proceedings

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Thermal Laser Stimulation (TLS) techniques have demonstrated their ability to detect and locate defects in integrated circuits (IC). Optical Beam Induced Resistance Change (OBIRCH) and all derivatives are based on the same physical principle: local laser heating of integrated circuits.The purpose of this paper is to synthesize the extensive work done in this area in order to highlight the essential physical principles. With this knowledge Dynamic Thermal Laser Stimulation (D-TLS) applications can then be tackled, optimizing parameters such as laser dwell time for sufficient heating. Finally, applications will be presented on 180nm, 120nm and 90nm, comparing the sensitivity of Dynamic Thermal Laser Stimulation with respect to light emission.

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Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation

Cited by 20 publications

References 0 publications

Preliminary Study on the Model of Thermal Laser Stimulation for Defect Localization in Integrated Circuits

Preliminary Study on the Model of Thermal Laser Stimulation for Defect Localization in Integrated Circuits

OBIRCH analysis of electrically stressed advanced graphic ICs

Dynamic Thermal Laser Stimulation Theory and Applications

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