Backside illuminated SPAD image sensor with 7.83μm pitch in 3D-stacked CMOS technology

Abbas, Tarek Al; Dutton, Neale A. W.; Almer, Oscar; Pellegrini, Sara; Henrion, Y.; Henderson, Robert K.

doi:10.1109/iedm.2016.7838372

Cited by 66 publications

(61 citation statements)

References 7 publications

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“…Though, the crux of a large-format camera remains the pixel pitch and the amount of functionality per pixel. Researchers have thus resorted to 3D integration using backside-illuminated SPADs on the top tier and control/processing/readout electronics on the bottom tier [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

Morimoto

Ardelean

et al. 2020

Optica

269

159

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We present the first 1Mpixel SPAD camera ever reported. The camera features 3.8ns time gating and 24kfps frame rate; it was fabricated in 180nm CIS technology. Two pixels have been designed with a pitch of 9.4µm in 7T and 5.75T configurations, respectively, achieving a maximum fill factor of 13.4%. The maximum PDP is 27%, median DCR 2.0cps, variation in gating length 120ps, position skew 410ps, and rise/fall time <550ps, all FWHM at 3.3V of excess bias. The sensor was used to capture 2D/3D scenes over 2m with an LSB of 5.4mm and a precision better than 7.8mm. Extended dynamic range is demonstrated in dual exposure operation mode. Spatially overlapped multi-object detection is experimentally demonstrated in single-photon time-gated ToF for the first time.

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Section: Introductionmentioning

confidence: 99%

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

Morimoto

Ardelean

et al. 2020

Optica

269

159

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“…The commercial potential across a large and diverse range of applications from medical imaging to automotive light detection and ranging (LIDAR) means that CMOS‐SPAD sensors and arrays are currently the focus of a great deal of research and development effort in both technology and design and are expected to remain so for some years to come. One recent technology trend that illustrates this is the development of SPAD‐optimized CMOS processes, from backside illuminated to three‐dimensional stacking . This means that the rate of performance improvement in CMOS‐SPADs is currently very high and is further enhanced by design because application‐specific SPAD integrated circuits – optimally designed for a given application – are readily achievable.…”

Section: Resultsmentioning

confidence: 99%

“…One recent technology trend that illustrates this is the development of SPAD-optimized CMOS processes, from backside illuminated 32 to three-dimensional stacking. 33 This means that the rate of performance improvement in CMOS-SPADs is currently very high and is further enhanced by design because application-specific SPAD integrated circuitsoptimally designed for a given applicationare readily achievable. Thus, we can look forward to continuing rapid performance improvement in CMOS-SPAD arrays that is likely to outpace improvements in the rival technologies.…”

Section: Resultsmentioning

confidence: 99%

Characterization of electronic displays using CMOS single‐photon avalanche diode image sensors

et al. 2018

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Advanced complementary metal‐oxide semiconductor‐compatible single‐photon avalanche diode array technology is progressing rapidly and is being deployed in a wide range of applications. We report for the first time the use of a complementary metal‐oxide semiconductor‐compatible single‐photon avalanche diode array to perform detailed optical measurements on pixels of an organic light‐emitting diode microdisplay at very high sampling rate, very low light level, and over a very wide dynamic range of luminance. This offers a clear demonstration of the huge potential of this single‐photon avalanche diode technology to reveal hitherto obscure details of the optical characteristics of individual and groups of organic light‐emitting diode pixels.

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“…If the approach here were to be applied to thicker/denser tissue structures, photon capture may also need to be improved to achieve practical measurement durations, however in this demonstration significant inefficiencies were present due to the use of a simple small aperture lens and a low fill factor (~1%) detector array. Detector arrays similar to that used here have now been developed with 45% fill factor, improved detection efficiency in the NIR and USB3.0 frame readout rates [21]. The fill factor improvement alone would reduce the 17 s exposure time through a human torso to ~ 3Hz image update rate.…”

Section: Discussion and Future Workmentioning

confidence: 99%

Ballistic and snake photon imaging for locating optical endomicroscopy fibres

Tanner¹,

Choudhary²,

Craven³

et al. 2017

Biomed. Opt. Express

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We demonstrate determination of the location of the distal-end of a fibre-optic device deep in tissue through the imaging of ballistic and snake photons using a time resolved single-photon detector array. The fibre was imaged with centimetre resolution, within clinically relevant settings and models. This technique can overcome the limitations imposed by tissue scattering in optically determining the in vivo location of fibre-optic medical instruments.

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Backside illuminated SPAD image sensor with 7.83μm pitch in 3D-stacked CMOS technology

Cited by 66 publications

References 7 publications

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

Characterization of electronic displays using CMOS single‐photon avalanche diode image sensors

Ballistic and snake photon imaging for locating optical endomicroscopy fibres

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