Backside copper metallisation of GaAs MESFETs

Chen, C. Y.; Chang, Edward Yi; Chang, Liang-Cheng; Chen, S. H.

doi:10.1049/el:20000917

Cited by 23 publications

(20 citation statements)

References 2 publications

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“…Rearranging and differentiating Eq. 1, we can obtain (2) The slope of the line of d(V)/d(lnJ) versus J is equal to RA eff . Thus, we can easily determine R by Eq.…”

Section: Measurement and Characterizationmentioning

confidence: 99%

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Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes

Chang

Lee

Chen

et al. 2004

Journal of Elec Materi

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Schottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400°C; the Ti/Co/Cu Schottky structure is thermally stable up to 300°C. Overall, the copper-metallized Schottky structures have excellent electrical characteristics and thermal stability, and can be used as the Schottky metals for GaAs devices.

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“…Rearranging and differentiating Eq. 1, we can obtain (2) The slope of the line of d(V)/d(lnJ) versus J is equal to RA eff . Thus, we can easily determine R by Eq.…”

Section: Measurement and Characterizationmentioning

confidence: 99%

“…[1][2][3] In this work, copper-metallized GaAsbased Schottky diodes are studied. Traditionally, the Ti/Pt/Au Schottky contact is the most widely used structure for the fabrication of metal-semiconductor field-effect transistors, high-electron-mobility transistors, and Schottky diodes.…”

Section: Introductionmentioning

confidence: 99%

Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes

Chang

Lee

Chen

et al. 2004

Journal of Elec Materi

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“…The advantages of copper metallization for Si technology include lower resistivity and higher electromigration resistance. Even though the use of copper as metallization metal has become very popular in Si devices, there were very few reports of copper metallization of GaAs devices published in the literature [4][5][6][7]. The use of copper as the metallization metal instead of gold has several advantages such as lower resistivity, higher thermal conductivity, and lower cost.…”

Section: Introductionmentioning

confidence: 99%

Copper-Metalized GaAs pHEMT with Cu/Ge Ohmic Contacts

Anichenko¹,

Arykov²,

Erofeev³

et al. 2012

International Journal of Microwave Science and Technology

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The fully Cu-metalized GaAs pHEMT using developed Cu/Ge-based ohmic contacts and T-gate Ti/Mo/Cu with length of the 150 nm has been successfully fabricated for the high-frequency applications. The fabricated Cu-metalized pHEMT has a maximum drain current of 360 mA/mm, an off-state gate-drain breakdown of 7 V, and a transconductance peak of 320 mS/mm at V ds = 3 V. The maximum stable gain value was about 15 dB at frequency 10 GHz. The current gain cutoff frequency of the copper-metalized device is about 60 GHz at V ds = 3 V, and maximum frequency of oscillations is beyond 100 GHz. This work investigated in detail the formation of Cu/Ge ohmic contacts to n-GaAs with an atomic hydrogen preannealing step. It was shown that after the first preliminary annealing is carried out in a flow of atomic hydrogen with a flow density of atoms of 10 13 /10 16 at. cm 2 s −1 a reduction in specific contact resistance by 2/2.5 times is observed. The reduction in specific contact resistance is apparently caused by the action of the hydrogen atoms which minimise the rate of the oxidizing reactions and activate solid phase reactions forming the ohmic contact during the thermal treatment process.

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“…[4][5][6][7] The advantages of using Cu (rather than Au) for metallization in GaAs devices include superior electrical conductivity, improved heat dissipation, and cost reduction. Studies have reported on the Ohmic contact of Cu/Ge/Pd to n-GaAs, showing excellent electrical characteristics with good thermal stability.…”

Section: Introductionmentioning

confidence: 99%

“…Studies have reported on the Ohmic contact of Cu/Ge/Pd to n-GaAs, showing excellent electrical characteristics with good thermal stability. 5 However, InGaAs has been widely used as the Ohmic contact layer for reduction of contact resistance in III-V high-speed devices, such as heterojunction bipolar transistors (HBTs) 8 and highelectron-mobility transistors (HEMTs). 9 This study investigates the feasibility of using Cu/Ge/Pd as an Ohmic contact for the InGaAs layer in GaAs-based devices.…”

Section: Introductionmentioning

confidence: 99%

Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs

Lin

Shie

et al. 2010

Journal of Elec Materi

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This study investigates electrical characteristics and the formation mechanism of the Cu/Ge/Pd Ohmic contact to n-type InGaAs. After annealing the contact at 250°C for 20 min, Cu 3 Ge and Pd 12 Ga 5 As 2 compounds formed and Ge diffused into the InGaAs layer, achieving a heavily doped InGaAs layer with a low contact resistivity of 1 9 10 À6 X cm 2 . Thermal stability tests were performed on the Cu/Ge/Pd Ohmic contact to InGaAs after Ohmic contact formation, showing no obvious degradation after a 72 h reliability test at 250°C. The results indicate excellent electrical characteristics and thermal stability using Cu/Ge/Pd as an Ohmic contact metal to an n-InGaAs layer.

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Backside copper metallisation of GaAs MESFETs

Cited by 23 publications

References 2 publications

Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes

Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes

Copper-Metalized GaAs pHEMT with Cu/Ge Ohmic Contacts

Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs

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