Background pressure does matter for the growth of graphene single crystal on copper foil: Key roles of oxygen partial pressure

Cao, Qiao-Jun; Shi, Bi-Yun; Dou, Weidong; Tang, Jianxin; Mao, Hongying

doi:10.1016/j.carbon.2018.07.072

Cited by 18 publications

(25 citation statements)

References 45 publications

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“…13,20,[37][38][39][40][41] Specifically for catalysts of low carbon solubility such as Cu, 42 the introduction of oxygen via partial preoxidation of the catalyst and/or a gaseous precursor during the CVD process is known to have a range of beneficial effects. 6,18,25,27,28,32,34,[43][44][45] Oxygen has been shown to be highly effective in removing pre-existing deleterious carbon and thus enable orders of magnitude lower graphene nucleation densities. 18,44 Thus large graphene domain sizes can be achieved which are required for emerging industrial applications; particularly in electronics and photonics.…”

Section: Introductionmentioning

confidence: 99%

The Role and Control of Residual Bulk Oxygen in the Catalytic Growth of 2D Materials

et al. 2019

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We systematically study the effects of residual oxygen in the bulk of Cu foil catalysts on the chemical vapour deposition (CVD) of graphene. While oxidation is widely used to remove impurities in metal catalysts and to control the nucleation density of graphene, we show that minute concentrations of residual bulk oxygen can significantly deteriorate the quality of as-grown graphene highlighted by an increased Raman D/G ratio, increased propensity to post-growth etching and increased fraction of multi-layer graphene nucleation. Starting from commercial Cu foils, we show that a simple hydrogen annealing step after the initial oxidation allows us to lower the residual oxygen level as measured by time-of-flight secondary ion mass spectrometry to produce graphene of significantly higher quality. This can be effectively combined with a short hydrocarbon exposure time of 10 min to achieve near full mono-layer graphene coverage, suitable for emerging industrial applications. We show that residual oxygen can have an equally significant impact on Fe catalysed h-BN CVD, and discuss the underlying mechanisms with parallels to well-known processes in metallurgy, catalysis and vacuum science.

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Section: Introductionmentioning

confidence: 99%

The Role and Control of Residual Bulk Oxygen in the Catalytic Growth of 2D Materials

et al. 2019

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“…The growth of graphene on copper foil was in a custom designed low-pressure chemical vapor deposition (LPCVD) system [43]. A combined gas flow of Ar, H 2 , and O 2 was introduced into the LPCVD chamber when the pressure reached 0.01 Pa.…”

Section: Methodsmentioning

confidence: 99%

Impact of Graphene Work Function on the Electronic Structures at the Interface between Graphene and Organic Molecules

et al. 2019

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The impact of graphene work function (WF) on the electronic structure at the graphene/organic interface has been investigated. WF manipulation of graphene is realized using self-assembled monolayers (SAMs) with different end groups. With this method, the upper surface of the functionalized graphene remains intact, and thus precludes changes of molecular orientation and packing structures of subsequently deposited active materials. The WF of NH2-SAM functionalized graphene is ~3.90 eV. On the other hand, the WF of graphene increases to ~5.38 eV on F-SAM. By tuning the WF of graphene, an upward band bending is found at the ZnPc/graphene interface on F-SAM. At the interface between C60 and NH2-SAM modified graphene, a downward band bending is observed.

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“…CVD graphene is typically poly-crystalline, and the presence of grain boundaries-along with other structural defects-strongly degrades its physical properties, such as charge mobility, thermal conductivity and even mechanical strength [63][64][65]. Many researchers explored the possibility of growing isolated, single-crystal graphene grains (Table 2) [49,56,[66][67][68][69][70][71][72][73]. To this end, the first requirement is a significant decrease in nucleation density, in order to delay the coalescence of the grains into a film and allow them to grow bigger.…”

Section: Single-crystal Graphene Grains: a Comparison Between Methanementioning

confidence: 99%

Recent Advancements on the CVD of Graphene on Copper from Ethanol Vapor

Faggio

Messina

Lofaro

et al. 2020

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Chemical vapor deposition (CVD) on metal foils is regarded as the most effective method to produce large-area graphene with properties in line with the requirements of an extensive range of electronic and optical applications. For the CVD of graphene, ethanol is a versatile carbon source alternative to the widely used methane. In this review we report on the current progress in this field showing how the CVD parameters can be modulated to gain full microstructural control on graphene grown on Cu foils. Using ethanol vapor, graphene can be grown as a continuous film with mono- or multi-layer thickness, and also in the form of isolated crystals on pre-oxidized Cu substrates. Overall, ethanol-CVD allows a controllable degree of crystallinity and tunable electrical/optical characteristics in the grown samples. In turn, this control translates into a superior versatility for device design and related applications.

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Background pressure does matter for the growth of graphene single crystal on copper foil: Key roles of oxygen partial pressure

Cited by 18 publications

References 45 publications

The Role and Control of Residual Bulk Oxygen in the Catalytic Growth of 2D Materials

The Role and Control of Residual Bulk Oxygen in the Catalytic Growth of 2D Materials

Impact of Graphene Work Function on the Electronic Structures at the Interface between Graphene and Organic Molecules

Recent Advancements on the CVD of Graphene on Copper from Ethanol Vapor

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