2012 IEEE International Reliability Physics Symposium (IRPS) 2012
DOI: 10.1109/irps.2012.6241878
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Backend dielectric chip reliability simulator for complex interconnect geometries

Abstract: Abstract-Backend dielectric breakdown degrades the reliability of circuits. We present test data and a methodology to estimate chip lifetime due to backend dielectric breakdown.Our methodology incorporates failures due to parallel tracks, the width effect, and field enhancement due to line ends. The impact of line ends has been found to be very significant experimentally, and it is demonstrated that this component can dominate the failure rate of the chip due to dielectric breakdown.

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Cited by 14 publications
(16 citation statements)
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References 22 publications
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“…The data collected from the test structures is presented in [13,17]. We've extracted g t and b t by fitting the data with a Weibull distribution.…”
Section: Test Resultsmentioning
confidence: 99%
See 4 more Smart Citations
“…The data collected from the test structures is presented in [13,17]. We've extracted g t and b t by fitting the data with a Weibull distribution.…”
Section: Test Resultsmentioning
confidence: 99%
“…The details of the test struc- tures, their design and results, are given in [13, 15,17]. The test structure in Fig.…”
Section: The Test Structuresmentioning
confidence: 99%
See 3 more Smart Citations