2015
DOI: 10.1016/j.microrel.2015.06.078
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Comprehensive reliability and aging analysis on SRAMs within microprocessor systems

Abstract: a b s t r a c tA framework is proposed to analyze the impact of both Front End of the Line (FEOL) and Back End of the Line (BEOL) wearout mechanisms on memories embedded within state-of-art microprocessors. Our methodology finds the detailed electrical stress and temperature of each SRAM cell within a memory by running a variety of standard benchmarks. Combining the stress/thermal profiles and the wearout models, the performance degradation of SRAM cells for each wearout mechanism is studied. The lifetimes of … Show more

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Cited by 15 publications
(3 citation statements)
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References 24 publications
(28 reference statements)
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“…Zhu et al (2017a) presented a systematic study on heterogeneous processors with power caps considered. Moreover, low-power, reliability, and performance/watt ratio optimization are also crucial considerations (Branover et al 2012;Zhu et al 2017a;Liu et al 2015Liu et al , 2016. Different from these research, our study focuses on sparse matrix and graph kernels.…”
Section: Performance Analysis For Coupled Heterogeneous Processorsmentioning
confidence: 99%
“…Zhu et al (2017a) presented a systematic study on heterogeneous processors with power caps considered. Moreover, low-power, reliability, and performance/watt ratio optimization are also crucial considerations (Branover et al 2012;Zhu et al 2017a;Liu et al 2015Liu et al , 2016. Different from these research, our study focuses on sparse matrix and graph kernels.…”
Section: Performance Analysis For Coupled Heterogeneous Processorsmentioning
confidence: 99%
“…In this chapter, we used the predictive HCI lifetime models for long-term performance-degradation simulations, where the Δ V th degradations due to HCI during stress time are modeled as [25][26][27] (4) where t stress is the stress time, r trans is the frequency-dependent transition rate, t trans is the transition time, and A HCI is a constant that depends on the inversion charge, the trap generation energy, the hot electron mean free path, and other process-dependent factors [28,29].…”
Section: Hcimentioning
confidence: 99%
“…Hence, a code symbol with availability t can be locally repaired even there are t − 1 node failures. Many recent works on LRCs focused on the study of availability-(r, t), which is the key to fault-tolerance in coding theory, system reliability and computation architecture [10][11][12]. In this paper, our works focus on single-parity LRCs with t available disjoint repairable groups (availability t ≥ 1).…”
Section: Introductionmentioning
confidence: 99%