Back Cover (Phys. Status Solidi A 2/2010)

Lee, J. H.; Wang, Zh. M.; Kim, E. S.; Kim, N. Y.; Park, S. H.; Salamo, Greg

doi:10.1002/pssa.201090003

Cited by 2 publications

(1 citation statement)

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“…The shape of the spectrum is a direct result from dispersion in quantum dot sizes. PL and AFM have been carried out for InGaAs QDs prepared on high-index GaAs substrates that con rm this size dispersion [8][9][10][11][12][13][14][15]. This phenomena is explained by the presence of surface steps in GaAs (113) substrates which could in uence that the diffusion length of adatoms is a strong factor in determining the shape size and density of QDs.…”

Section: Resultsmentioning

confidence: 93%

Hydrostatic and Biaxial Strain Effect on Electronic Properties of (In,Ga)As Capped InAs/GaAs (113)A Quantum Dots

2024

Curr Res Env Sci Eco Letters

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Optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In, GA)As. Have been investigated. The photoluminescence spectroscopy has been used to explain the optical properties of InAs QD. The reflection high-energy electron diffraction (RHEED) is used to develop the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots when InAs dots are capped by GaAs and separation between large and small quantum dots, when they are encapsulated by Ingas has been showed. The PL polarization measurements, have shown that the small dots, require an elongated form, but the large dots present a quasi-isotropic behavior. These results are due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions.

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Section: Resultsmentioning

confidence: 93%

Hydrostatic and Biaxial Strain Effect on Electronic Properties of (In,Ga)As Capped InAs/GaAs (113)A Quantum Dots

2024

Curr Res Env Sci Eco Letters

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show abstract

Hydrostatic and biaxial strain effect on electronic properties of (In,Ga)As capped InAs/GaAs (113)A quantum dots

Saidi,

Bouzaiene,

Maaref

et al. 2024

Preprint

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Optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Have been investigated. The photoluminescence spectroscopy have been used to explain the optical properties of InAs QD. The reflection high-energy electron diffraction (RHEED) is used to develop the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots when InAs dots are capped by GaAs and separation between large and small quantum dots, when they are encapsulated by InGaAs has been showed. The PL polarization measurements, have shown that the small dots, require an elongated form, but the large dots present a quasi-isotropic behavior. These results are due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions.

show abstract

Back Cover (Phys. Status Solidi A 2/2010)

Cited by 2 publications

References 0 publications

Hydrostatic and Biaxial Strain Effect on Electronic Properties of (In,Ga)As Capped InAs/GaAs (113)A Quantum Dots

Hydrostatic and Biaxial Strain Effect on Electronic Properties of (In,Ga)As Capped InAs/GaAs (113)A Quantum Dots

Hydrostatic and biaxial strain effect on electronic properties of (In,Ga)As capped InAs/GaAs (113)A quantum dots

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