Hydrostatic and biaxial strain effect on electronic properties of (In,Ga)As capped InAs/GaAs (113)A quantum dots

Abstract

Optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Have been investigated. The photoluminescence spectroscopy have been used to explain the optical properties of InAs QD. The reflection high-energy electron diffraction (RHEED) is used to develop the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots when InAs dots are capped by GaAs and separation between large and small quantum dots, when they are encapsulated by InGaAs has been showed. The PL polarization measurements, have shown that the small dots, require an elongated form, but the large dots present a quasi-isotropic behavior. These results are due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions.