Back and front interface related generation-recombination noise in buried-channel SOI pMOSFETs

Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Simoen, Eddy; Claeys, Cor

doi:10.1109/16.485655

Cited by 25 publications

(12 citation statements)

References 7 publications

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“…42,114,115 The position of the conduction channel can be varied from surface to bulk mode by the front and back gate voltages, which affects the noise properties. Ultimately, for sufficiently thin Si-body thickness (below ~10 nm) the interior of the body is inverted which separates the carriers from the noisy oxide interfaces.…”

Section: /F Noise Characteristicsmentioning

confidence: 99%

Low-Frequency Noise In Advanced Mos Devices

2007

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Section: /F Noise Characteristicsmentioning

confidence: 99%

Low-Frequency Noise In Advanced Mos Devices

2007

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“…K12 K12 SIB(f) = ----+ p brec [25] A,,f PJ with 'B the base current, Ihrcc the base surface recombination current, e the emitter perimeter, Ae the emitter area, and KA and K technology-related parameters. The first term in Eq.…”

Section: Case Studies Of Noise Diagnosticsmentioning

confidence: 99%

Noise as a Diagnostic Tool for Semiconductor Material and Device Characterization

Claeys

Simoen

1998

J. Electrochem. Soc.

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The potential of using low-frequency noise as a diagnostic tool for semiconductor material and device characterization is reviewed. First a brief introduction is given related to the different noise sources in order to obtain insight into the spectral information present in their response signal. Special attention is given to 1/f noise, random telegraph signal noise, and generation-recombination noise. The physics associated with the noise properties of bulk and interface defect centers is investigated and illustrated by some case studies for both metal oxide semiconductor and bipolar devices. Advantages and disadvantages compared to other spectroscopic techniques are addressed in view of future trends in electronic devices.

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“…20 In the literature, one has demonstrated on a few occasions that coupling between the front and the back-gate bias can introduce excess Lorentzian noise. [25][26][27][28] It has, for example, been found in PD SOI n-MOSFETs that when the back-gate bias is varied from zero to negative, a Lorentzian component enters the front-gate noise spectrum. 28 This excess noise has been ascribed to generation-recombination ͑GR͒ events associated with traps in the silicon film, which give rise to fluctuations in the body potential.…”

Section: Discussionmentioning

confidence: 99%

“…A similar type of GR noise was shown to occur at the back interface of SOI n-or p-MOSFETs, fabricated in a p-type film. 25 It is tempting to ascribe the observations in the n-channel transistors to such a mechanism, whereby a positive back-gate potential is built-in by the irradiation, leading first to an inversion of the isolation edges at the back interface. The holes injected by EVB tunneling will then give rise to an increase of the body potential, which activates the GR centers in the silicon material.…”

Section: Discussionmentioning

confidence: 99%

High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Simoen¹,

Mercha²,

Rafı́³

et al. 2004

Journal of Applied Physics

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Articles you may be interested inEffect of gate capping configurations and silicon-on-insulator thickness with external stresses on partially depleted metal-oxide-semiconductor field-effect transistors Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxidesemiconductor field-effect transistors with accumulated back gate Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 94, 4461 (2003); 10.1063/1.1604452Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal-oxide-semiconductor field-effect transistors Appl.This article describes the impact of a high-energy proton irradiation on the parameters of the Lorentzian noise overshoot, occurring in ultrathin gate oxide 0.10 m partially depleted ͑PD͒ silicon-on-insulator metal-oxide-semiconductor field-effect transistors ͑MOSFETs͒, operated in the linear regime. It is shown that the drain current noise spectral density S I exhibits an increase after irradiation, while the Lorentzian time constant shows a different response to the 60/65 MeV protons in n-or p-channel transistors. In addition, the excess noise peak develops a pronounced radiation-induced dependence on the back-gate bias V BG , which is different for both device types: a strong increase of S I is found for the PD SOI p-MOSFETs, upon changing V BG into the accumulation regime, while in the first instance, the opposite is found for the n-MOSFETs. These observations are discussed in terms of a RC-filtered shot noise model and of the ionization induced positive charge trapping in the buried and isolation oxides. The results lead to the conclusion that in n-MOSFETs, an additional generation-recombination component becomes active by the charge trapping. In the p-type counterparts, on the other hand, it is believed that irradiation modulates the body-channel coupling factor, giving rise to a strong increase of S I with V BG , while the corresponding is in a first approximation not affected.

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Back and front interface related generation-recombination noise in buried-channel SOI pMOSFETs

Cited by 25 publications

References 7 publications

Low-Frequency Noise In Advanced Mos Devices

Low-Frequency Noise In Advanced Mos Devices

Noise as a Diagnostic Tool for Semiconductor Material and Device Characterization

High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors

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