An Ultrahigh‐Performance Photodetector based on a Perovskite–Transition‐Metal‐Dichalcogenide Hybrid Structure

Abstract

An ultrahigh performance MoS2 photodetector with high photoresponsivity (1.94 × 10(6) A W(-1) ) and detectivity (1.29 × 10(12) Jones) under 520 nm and 4.63 pW laser exposure is demonstrated. This photodetector is based on a methyl-ammonium lead halide perovskite/MoS2 hybrid structure with (3-aminopropyl)triethoxysilane doping. The performance degradation caused by moisture is also minimized down to 20% by adopting a new encapsulation bilayer of octadecyltrichlorosilane/polymethyl methacrylate.

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

“…In addition, the other important optoelectronic parameters,38, 39, 40 such as detectivity and external quantum efficiency, were also extracted from the photodetectors fabricated on the ReS 2 , ReSe 2 , and ReS 2 /ReSe 2 heterojunctions; the plotted data is provided in the Supporting Information chapter (Figure S5, Supporting Information). Finally, for performance comparison of the gate‐controllable ReS 2 /ReSe 2 heterojunction photodetector with other devices, we plotted the photoresponsivity values obtained in this study and previous studies for vdW photodetectors4, 5, 6, 7, 8, 9, 10, 11, 13, 23, 41, 42, 43 in Figure 4k. Our gate‐controllable ReS 2 /ReSe 2 heterojunction photodetector (blue dotted line) exhibited relatively high photoresponsivity values over a broad range of wavelengths, compared to other vdW photodetectors.…”

“…Since the graphene photodetector was first implemented in 2009,1 various van der Waals (vdW) materials, such as graphene,1, 2, 3, 4 transition metal dichalcogenides (TMDs),5, 6, 7, 8, 9, 10, 11, 12 and black phosphorus (BP),13, 14, 15 have been utilized to achieve high‐performance photodetectors with high photoresponsivity and a wide detection range. In the early graphene‐based photodetectors, photodetection in a wide range from ultraviolet to terahertz wavelengths was possible, owing to the zero‐bandgap nature of graphene 16.…”

TiO2 Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

“…For example, the graphene/perovskite bilayer devices exhibit very low on/off ratio of smaller than 2, [18][19][20][21] and the transition metal sulfides (WS 2 , MoS 2 )/perovskite bilayer devices have very long rise/decay time of a few seconds. [22,23] Also, it should be noted that graphene and the transition metal sulfides are usually deposited by complex and costly process, such as chemical vapor deposition, mechanical exfoliation, and hence is not suitable for large-area fabrication. Solutionprocessed MoS 2 [24] or organic [25,26] /CH 3 CH 3 PbI 3 photodetectors have been fabricated, but their performances are still limited by low on/off ratios of <500.…”

“…Significant enhancement in photoresponsivity has been achieved. [18][19][20][21][22][23][24] However, the reported bilayer devices usually employed high-conductive 2D layer to function as main photocarrier transport channel, and this leads to certain detrimental defects. For example, the graphene/perovskite bilayer devices exhibit very low on/off ratio of smaller than 2, [18][19][20][21] and the transition metal sulfides (WS 2 , MoS 2 )/perovskite bilayer devices have very long rise/decay time of a few seconds.…”

“…[11,12] Owing to their exciting photovoltaic applications, their promising potential in photodetection is drawing growing interest. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Yang and co-workers first fabricated a vertical perovskite photodetector, [13] which demonstrated excellent light detecting capability. Lateral photodetectors are easy to make, and more importantly, their intrinsic gain mechanism can lead to very high photosensitivity.…”