Avoiding Desiccation Cracks during the Formation of Multilayer Graphene Oxide Films

Abstract

Obtaining free-standing crack-free graphene oxide and reduced graphene oxide films is challenging. Free-standing graphene oxide is widely used to fabricate flexible sensors and energy storage devices. The present work is focused on the certainty of pure precursors in preparing crack-free graphene oxide film. Four samples of graphene oxide are synthesized using the known Hummer’s method. The graphene oxide films were studied using scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy, and Fourier transform infrared spectroscopy. The fabrication of graphene oxide free-standing film is simple and cost effective and can be produced on a large scale for commercial applications. The obtained crack-free graphene oxide free-standing film is 15.1 μm thick. The graphene oxide film is thermally reduced to obtain a highly conducting, large-area, and multilayer reduced graphene oxide film. Reduced graphene oxide film exhibits hydrophobicity with a measured contact angle of 95° and sheet resistance of 149.56 Ω/□. The Joule heating experiment is performed with an external potential of 8.4 V.

Structural Effects of Crumpled Graphene and Recent Developments in Comprehensive Sensor Applications: A Review

“…The author primarily discussed the amount of carbon and oxygen, confirming that an equal quantity of carbon and oxygen inside the specimen may lead to generating a GO film without cracks. [ 49 ]…”