“…A negative correlation between large blister size and high blister density, similar to the results obtained here for varying substrate resistivities, has been shown for blistered Al2O3 stack systems deposited by spatial ALD and was attributed to a competition between lateral and vertical diffusion of hydrogen at the Si interface depending on post-anneal temperature, but no link to substrate doping was mentioned [32]. In absolute values, the blistered surface area has been reported with similar values, from 0.1 to 4 % depending on substrate treatment and post-anneal temperature [6,32], which are not in contradiction to the values between 0 and 0.35 % determined here. These values may seem rather low in general, but depending on the final desired properties and application of the Al2O3 film, blisters may be harmful even when not covering larger surface areas.…”