Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxide

Ott, J.; Pasanen, Toni P.; Gädda, A.; Garín, M.; Rosta, Kawa; Vähänissi, Ville; Savin, Hele

doi:10.1016/j.apsusc.2020.146400

Cited by 5 publications

(2 citation statements)

References 28 publications

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“…Several publications have shown that typical organosilane or phosphonic acid SAMs on Si(100) act as viable ALD resists, but they lose their selectivity due to the hydrolytic desorption promoted by the ALD conditions. , Nevertheless, due to the long symmetrical aliphatic chains associated with SAMs, they can provide effective shielding of the underlying surface from the ALD chemistry in the defect-free areas . Around defects, due to the disruption of the self-assembly, SAMs are less efficient in protecting the substrates from the ALD reactions. ,− Such dependence of stability on surface morphology complicates the use of SAM resists on nonideal substrates.…”

Section: Resultsmentioning

confidence: 99%

Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using N-Halogen-succinimides

Raffaelle,

Wang,

Shestopalov

2023

ACS Appl. Mater. Interfaces

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The focus of this study was to demonstrate the vapor-phase halogenation of Si(100) and subsequently evaluate the inhibiting ability of the halogenated surfaces toward atomic layer deposition (ALD) of aluminum oxide (Al2O3). Hydrogen-terminated silicon ⟨100⟩ (H–Si(100)) was halogenated using N-chlorosuccinimide (NCS), N-bromosuccinimide (NBS), and N-iodosuccinimide (NIS) in a vacuum-based chemical process. The composition and physical properties of the prepared monolayers were analyzed by using X-ray photoelectron spectroscopy (XPS) and contact angle (CA) goniometry. These measurements confirmed that all three reagents were more effective in halogenating H–Si(100) over OH–Si(100) in the vapor phase. The stability of the modified surfaces in air was also tested, with the chlorinated surface showing the greatest resistance to monolayer degradation and silicon oxide (SiO2) generation within the first 24 h of exposure to air. XPS and atomic force microscopy (AFM) measurements showed that the succinimide-derived Hal-Si(100) surfaces exhibited blocking ability superior to that of H–Si(100), a commonly used ALD resist. This halogenation method provides a dry chemistry alternative for creating halogen-based ALD resists on Si(100) in near-ambient environments.

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Section: Resultsmentioning

confidence: 99%

Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using N-Halogen-succinimides

Raffaelle,

Wang,

Shestopalov

2023

ACS Appl. Mater. Interfaces

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“…This may be caused, or contributed to, by the large blisters reported in ref. [30] (incl. Supporting Information) for thick Al 2 O 3 films on high-resistivity silicon substrates.…”

Section: Effects Of Gamma Irradiationmentioning

confidence: 99%

Characterization of magnetic Czochralski silicon devices with aluminium oxide field insulator: effect of oxygen precursor on electrical properties and radiation hardness

Ott¹,

Bharthuar²,

Gädda³

et al. 2021

J. Inst.

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Aluminium oxide (Al2O3) has been proposed as an alternative to thermal silicon dioxide (SiO2) as field insulator and surface passivation for silicon detectors, where it could substitute p-stop/p-spray insulation implants between pixels due to its negative oxide charge, and enable capacitive coupling of segments by means of its higher dielectric constant. Al2O3 is commonly grown by atomic layer deposition (ALD), which allows the deposition of thin layers with excellent precision. In this work, we report the electrical characterization of single pad detectors (diodes) and MOS capacitors fabricated on magnetic Czochralski silicon substrates and using Al2O3 as field insulator. Devices are studied by capacitance-voltage, current-voltage, and transient current technique measurements. We evaluate the influence of the oxygen precursors in the ALD process, as well as the effect of gamma irradiation, on the properties of these devices. We observe that leakage currents in diodes before the onset of breakdown are low for all studied ALD processes. Charge collection as measured by transient current technique (TCT) is also independent of the choice of oxygen precursor. The Al2O3 films deposited with O3 possess a higher negative oxide charge than films deposited by H2O, However, in diodes a higher oxide charge is linked to earlier breakdown, as has been predicted by simulation studies. A combination of H2and O3 precursors results in a good compromise between the beneficial properties provided by the respective individual precursors.

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Formation and elimination mechanism of thermal blistering in Al2O3/Si system

et al. 2021

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Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxide

Cited by 5 publications

References 28 publications

Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using N-Halogen-succinimides

Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using N-Halogen-succinimides

Characterization of magnetic Czochralski silicon devices with aluminium oxide field insulator: effect of oxygen precursor on electrical properties and radiation hardness

Formation and elimination mechanism of thermal blistering in Al2O3/Si system

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