Avalanche ionization and dielectric breakdown in silicon with ultrafast laser pulses

Pronko, P. P.; VanRompay, P.A.; Horvath, Christopher; Loesel, Frieder H.; Juhász, Tibor; Liu, X.; Mourou, G.

doi:10.1103/physrevb.58.2387

Cited by 159 publications

(72 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The electrons produced by avalanche ionization dominate the absorption by Bremsstrahlung and resonance absorption, and the mechanisms of the laser absorption become independent of the initial state of the [7][8][9]. With femtosecond lasers the ablation process occurs on a timescale of the order of the electron-phonon relaxation times ( $ 10 ps), thus the thermal damage around the ablation spot is much less than nanosecond ablation.…”

Section: Introductionmentioning

confidence: 98%

“…The high laser intensities ( $ 10 13 W/cm 2 ) available with femtosecond lasers means that the dominant mechanisms for laser-matter interaction are multi-photon absorption and avalanche ionization [7,8], which permits laser ablation at wavelengths that would not be possible via single photon absorption in the nanosecond regime. The electrons produced by avalanche ionization dominate the absorption by Bremsstrahlung and resonance absorption, and the mechanisms of the laser absorption become independent of the initial state of the [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A comparative study of gadolinium gallium garnet growth by femtosecond and nanosecond pulsed laser deposition

Darby

May-Smith

Eason

et al. 2008

Applied Surface Science

View full text Add to dashboard Cite

The growth of epitaxial Nd:Gd 3 Ga 5 O 12 (GGG) on Y 3 Al 5 O 12 (YAG) by femtosecond pulsed laser deposition is reported. We have used a Ti:sapphire laser at a wavelength of 800 nm and pulse length of 130 fs, operating at a repetition rate of 1 kHz. The film properties have been studied systematically as a function of the deposition parameters of laser fluence, spot-size, oxygen pressure, target-substrate distance and temperature. Scanning electron microscopy, atomic force microscopy and X-ray diffractometry were used to characterise the surface structure and crystallinity of the films. X-ray diffraction analysis shows that epitaxial growth has occurred. A comparison between the ion velocities produced by nanosecond and femtosecond laser ablation of the GGG target material has been investigated by the Langmuir probe technique. The results indicate a large difference in the plasma characteristics between femtosecond and nanosecond ablation, with ion velocities up to eight times faster observed in the femtosecond case. #

show abstract

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

A comparative study of gadolinium gallium garnet growth by femtosecond and nanosecond pulsed laser deposition

Darby

May-Smith

Eason

et al. 2008

Applied Surface Science

View full text Add to dashboard Cite

show abstract

“…They found a narrow NP size distribution (average radius of~7 nm) and observed that NP emission starts just above~0.15 J/cm 2 , a value very close to the damage threshold of Si irradiated by~100 fs laser pulses [69]. This result indicates that NP formation does not occur during the expansion of atomic vapors but that nanoparticles are predominantly formed at the very early stages of the evolution of the material, as a consequence of the complex relaxation dynamics of the extreme material state induced by ultrashort laser irradiation.…”

Section: à2mentioning

confidence: 91%

Laser Fabrication of Nanoparticles

Caricato

Luches

Martino

2015

Handbook of Nanoparticles

View full text Add to dashboard Cite

Lasers are widely used for material processing (cutting, drilling, cleaning, film deposition, etc.). A recent application is for nanoparticle fabrication. Pulsed laser ablation is by far the fastest and clean method to fabricate nanoparticles directly from bulk targets. For this purpose, target ablation is performed in vacuum, in gas atmosphere, or in liquids with fast (nanosecond) and ultrafast (picosecond, femtosecond) laser pulses. Mostly metal but also semiconductor and ceramic nanoparticles were fabricated. In the early stage of this technique, the main problem was the large size distribution of the produced nanoparticles. But the possibility to independently handle laser pulse characteristics (wavelength, power density, pulse duration, etc.) and the accurate control and optimization of the ambient parameters is leading to an efficient tailoring of the nanoparticle size, due also to helpful theoretical and numerical models. A review is presented of the most important studies and of the obtained results.

show abstract

“…The ablation threshold was also determined from the semi-logarithmic plot of the squared diameter of the modified region, measured with an SEM, as a function of laser fluence [33]. The single shot ablation threshold of silicon was determined to be 19 nJ corresponding to a peak laser fluence of 0.37 J/cm 2 , in good agreement with the published data [30,[34][35][36].…”

Section: Experimental Methodsmentioning

confidence: 99%