Avalanche breakdown voltages of diffused silicon and germanium diodes

Root, C.D.; Lieb, D.; Jackson, B. D.

doi:10.1109/t-ed.1960.14690

Cited by 15 publications

(1 citation statement)

References 5 publications

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“…The measurement of some of the properties of such diodes, such as peak inverse voltage, only confirms information on obtained on various layers and it can be seen that the agreement is quite reasonable. It is also clear that if either the diffusions are sufficiently shallow to approach step junctions or, alternatively, allowance is made for gradient (13), a more precise measurement of resistivity is obtained than by the threepoint probe method as the voltage breakdown depends to a greater extent on resistivity in the range considered here. Also, premature breakdown due to surface effects is much less likely than with the three-point probe.…”

Section: Diode Characteristicsmentioning

confidence: 98%

Epitaxial Deposition of Silicon Layers by Pyrolysis of Silane

Mayer¹,

Shea²

1964

J. Electrochem. Soc.

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The pyrolysis of silane diluted by a carrier gas in a horizontal-type system is described. Films of closely controlled thickness have been obtained. Control of the electrical resistivity of the films by admixture of suitable dopants is shown. The effect of various process parameters on growth rate is discussed. Experimental data on migration of dopant from the substrate to the grown layer are presented, and the mechanism involved is discussed. Some characteristics of devices using such layers are shown.

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Section: Diode Characteristicsmentioning

confidence: 98%