Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)

Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs

“…From the graph, neither a consistent rise as a function of the effective LET, nor a saturation of the cross section are seen. A significant decrease in cross section with increasing effective LET is seen for neon ions for this circuit [14].…”

“…TCAD simulations at various angles, locations, and directions for 520 MeV neon ions (LET of 2.7 MeV·cm 2 /mg, or 0.028 pC/ μm) were performed, with the LET corresponding to that of the broadbeam data presented in [14]. For each simulation, charge is generated between two points, one is a fixed x,y coordinate on the xy plane (z = 0), the other is a point defined by x', y', z' coordinated.…”

“…• A patterned subcollector (n for npn, p for pnp) on a doped substrate SiGe HBTs have been found to be quite tolerant to total ionizing dose (the amount of trapped charge accumulated over time found typically in the oxides and oxide interfaces of the device) and displacement effects (the result of lattice defects typically attributed to non-ionizing nuclear scattering reactions) [5][6][7][8][9][10][11], but are vulnerable to SEU [12][13][14][15][16]. [16].…”

“…SiGe HBTs have also been shown to be resistant to various types of ionizing radiation effects, making them a compelling candidates for space applications [4 -11]. Unfortunately, this technology is susceptible to SEU as seen, for example, in [12][13][14][15][16]. Space applications employing these circuits will require detailed analysis of the SEU susceptibility.…”

“…Fig.1 shows heavy ion data collected on a string of shift registers fabricated using two different flip-flop architectures in IBM's 5AM SiGe HBT process [14]. These data are for neon, argon, and xenon ions incident at 0°, 45°, and 60°.…”