Automatic parameter extraction techniques in IC-CAP for a compact double gate MOSFET model

Abstract

In this paper, automatic parameter extraction techniques of Agilent's IC-CAP modeling package are presented to extract our explicit compact model parameters. This model is developed based on a surface potential model and coded in Verilog-A. The model has been adapted to Trigate MOSFETs, includes short channel effects (SCEs) and allows accurate simulations of the device characteristics. The parameter extraction routines provide an effective way to extract the model parameters. The techniques minimize the discrepancy and error between the simulation results and the available experimental data for more accurate parameter values and reliable circuit simulation. Behavior of the second derivative of the drain current is also verified and proves to be accurate and continuous through the different operating regimes. The results show good agreement with measured transistor characteristics under different conditions and through all operating regimes.

A Novel Approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems

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Review on double-gate MOSFETs and FinFETs modeling

“…These parameters can be extracted by optimization methods from measured/simulated I-V characteristics. A simple extraction procedure was developed in IC-CAP [39].…”