Automatic large-signal GaAs HEMT modeling for power amplifier design

Design of an RF output Class JJ−1 Doherty power amplifier using post‐matching varactor diodes for configurable IoT transmitters

“…RF designers want to improve performance parameters with the aim of achieving high system bandwidth, good linearity, lower power consumption, high peak to average power ratio (PAPR), and reduced back-off power. The Doherty power amplifier (DPA) has been shown to improve transmitter performance, [3][4][5][6][7] but DPAs faced significant challenges as they must be operated at high PAPRs (starting at 6 dB output power back-off and above).…”

An assessment of automated extraction capabilities for small-signal modeling of various GaAs pHEMT processes

“…Use Small-signal models of microwave transistors have a relatively wide range of applications including evaluation and investigation of device physics, an analysis of device performance, assessment and comparison of various process technologies [1], noise and nonlinear transistor modeling [2,3] and also the MMIC design. There are a lot of papers devoted to extraction of pHEMT small-signal equivalent circuits with various circuit layouts and extraction routines.…”

Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications

“…The calculated parameters of models of several inductors are given in Table 2. The methods used to extract the parameters of active and passive element models are described in detail in [23][24][25].…”