Automated Hall profiling system for the characterisation of semiconductors at room and liquid nitrogen temperatures

Blight, S. R.; Nicholls, R. E.; Sangha, Seerat; Kirby, Paul B.; Teale, L; Hiscock, S P; Stewart, C. P.

doi:10.1088/0022-3735/21/5/011

Cited by 12 publications

(2 citation statements)

References 13 publications

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“…Indeed, by performing ellipsometry measurements after each removal step, any possible source of errors related to etch rate variation during the experiment can be neglected. The vertical error bars uncertainties of DHE mobility and dopant concentration ( S µDHE and S n DHE , respectively) calculated assuming R SH , σ S (and the product R SH ·σ S 2 ) to be independent variables [ 17 ]:…”

Section: Development Of Etching Processes For Si 1− mentioning

confidence: 99%

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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si₁₋_xGe_x and Si layers

Daubriac¹,

Scheid²,

Rizk³

et al. 2018

Beilstein J. Nanotechnol.

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In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the most challenging process, we show the reliability of the SC1 chemical solution (NH4OH/H2O2/H2O) with its slow etch rate, stoichiometry conservation and low roughness generation. The reliability of a complete DHE procedure, with an etching step as small as 0.5 nm, is demonstrated on a dedicated 20 nm thick SiGe test structure fabricated by CVD and uniformly doped in situ during growth. The developed method is finally applied to the investigation of dopant activation achieved by advanced annealing methods (including millisecond and nanosecond laser annealing) in two material systems: 6 nm thick SiGeOI and 11 nm thick SOI. In both cases, DHE is shown to be a uniquely sensitive characterisation technique for a detailed investigation of dopant activation in ultrashallow layers, providing sub-nanometre resolution for both dopant concentration and carrier mobility depth profiles.

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Section: Development Of Etching Processes For Si 1− mentioning

confidence: 99%

“…In contrast, differential Hall effect (DHE) profiling [ 17 – 18 ] can potentially meet all the requirements related to the precise measurement of dopant activation at the semiconductor surface. DHE relies on the iteration of etching process and conventional Hall effect measurements.…”

Section: Introductionmentioning

confidence: 99%

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si₁₋_xGe_x and Si layers

Daubriac¹,

Scheid²,

Rizk³

et al. 2018

Beilstein J. Nanotechnol.

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show abstract

Donor passivation in n-AllnAs layers by fluorine

Yamamoto

Hayafuji

Fujii

et al. 1996

JEM

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Hall mobility profiling in high electron mobility transistor structures

Djamdji

Blunt

1993

Materials Science and Engineering: B

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Automated Hall profiling system for the characterisation of semiconductors at room and liquid nitrogen temperatures

Cited by 12 publications

References 13 publications

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si₁₋_xGe_x and Si layers

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si₁₋_xGe_x and Si layers

Donor passivation in n-AllnAs layers by fluorine

Hall mobility profiling in high electron mobility transistor structures

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Automated Hall profiling system for the characterisation of semiconductors at room and liquid nitrogen temperatures

Cited by 12 publications

References 13 publications

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers

Donor passivation in n-AllnAs layers by fluorine

Hall mobility profiling in high electron mobility transistor structures

Contact Info

Product

Resources

About

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si₁₋_xGe_x and Si layers

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si₁₋_xGe_x and Si layers