Automated Dose and Dopant Level Monitoring by SIMS

Maul, Hans; Loibl, N.; Ehrke, U.; Merkulov, A.I.; Peres, P.; Schuhmacher, M.

doi:10.1063/1.2401588

Cited by 2 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4 Hall-effect measurements were performed on an Accent HL5500 Hall-effect system, and the samples were patterned with the Van der Pauw geometry defined with a photolithographic process. The implanted profiles were analyzed using SIMS.…”

Section: Methodsmentioning

confidence: 99%

Optimum activation and diffusion with a combination of spike and flash annealing

Paul

Lerch

Chan³

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Different shallow n-type and p-type dopants were annealed with spike, flash, and a combination of spike+ flash or vice versa to find the optimum annealing condition for both activation and diffusion. The implant conditions investigated during this study were 74 Ge + with 11 B + as well as 11 B + , 49 BF 2 + , and 75 As + . The wafers were characterized regarding sheet resistance, junction depth, and chemical dose. An electrically active dose was derived from the Hall-effect measurement. Transmission electron microscopy analysis for the characterization of defects was done on selected samples. Boron implanted into crystalline as well as preamorphized silicon shows a similarly low sheet resistance which is independent of whether they are annealed with spike+ flash, flash, or flash + spike. For arsenic by far the lowest sheet resistance is seen with a combination of spike+ flash anneal. The main advantage when using a spike+ flash anneal combination is that similar sheet resistance values for arsenic and boron implant can be achieved with the same anneal sequence.

show abstract

Section: Methodsmentioning

confidence: 99%