Automated, deep reactive ion etching free fiber coupling to nanophotonic devices

Flassig, Fabian; Flaschmann, Rasmus; Kainz, Thomas; Ernst, Sven; Strohauer, Stefan; Schmid, Christian; Zugliani, Lucio; Müller, Kai; Finley, Jonathan J.

doi:10.1117/12.2611160

Cited by 4 publications

(3 citation statements)

References 32 publications

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“…quantum dots, 8 NV centres in diamond 9 or 2D materials 10 ), spin-photon interfaces 11,12 or single-photon detectors are needed. In terms of detectors, superconducting nanowire single-photon detectors (SNSPDs) 13–16 have prevailed over other options such as single-photon avalanche photodiodes (SPADs) 17 or transition edge sensors (TES). 18 Besides near-unity quantum efficiency, 19 one of their outstanding performance features is the timing jitter describing the temporal resolution.…”

Section: Introductionmentioning

confidence: 99%

The dependence of timing jitter of superconducting nanowire single-photon detectors on the multi-layer sample design and slew rate

et al. 2023

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Section: Introductionmentioning

confidence: 99%

The dependence of timing jitter of superconducting nanowire single-photon detectors on the multi-layer sample design and slew rate

et al. 2023

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“…NV centers in diamond [9], 2D materials [10], or quantum dots [11]), spin-photon interfaces [12], and detectors. For the latter, superconducting (nanowire) single-photon detectors (SNSPDs) [13][14][15][16][17][18][19] have prevailed over other potential candidates such as transition edge sensors [20] or single-photon avalanche diodes [21]. In particular, SNSPDs outperform the other systems by their excellent timing resolution in the range of a few ps [22] combined with their high system detection efficiency in the visible to near-infrared [23] when integrated into a resonator structure.…”

Section: Introductionmentioning

confidence: 99%

Optimizing the growth conditions of Al mirrors for superconducting nanowire single-photon detectors

Flaschmann

Schmid

Zugliani

et al. 2023

Mater. Quantum. Technol.

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We investigate the growth conditions for thin (≤ 200 nm) sputtered aluminum (Al) films. These coatings are needed for various applications, e.g. for advanced manufacturing processes in the aerospace industry or for nanostructures for quantum devices. Obtaining high-quality films, with low roughness, requires precise optimization of the deposition process. To this end, we tune various sputtering parameters such as the deposition rate, temperature and power, which enables 50 nm thin films with a root mean square (RMS) roughness of less than 1 nm and high reflectivity. Finally, we confirm the high quality of the deposited films by realizing superconducting single-photon detectors integrated into multi-layer heterostructures consisting of an aluminum mirror and a silicon dioxide dielectric spacer. We achieve an improvement in detection efficiency at 780 nm from 40 % to 70 % by this integration approach.

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“…Until now, dry etching methods and wet etching have been the major methods for SiNW fabrication. Dry etching, including reactive ion etching (RIE) [9,10], vapor-liquid-solid method (VLS) [11,12], and plasma ion-coupled reactive ion etching (PICRIE), can fabricate high-quality SiNWs. However, their vast application in the industry is hindered by the high cost of instrumentation.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Silicon Nanowires by Metal-Assisted Chemical Etching Combined with Micro-Vibration

Huang

Wu²,

et al. 2023

Materials

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In this work, we design a micro-vibration platform, which combined with the traditional metal-assisted chemical etching (MaCE) to etch silicon nanowires (SiNWs). The etching mechanism of SiNWs, including in the mass-transport (MT) and charge-transport (CT) processes, was explored through the characterization of SiNW’s length as a function of MaCE combined with micro-vibration conditions, such as vibration amplitude and frequency. The scanning electron microscope (SEM) experimental results indicated that the etching rate would be continuously improved with an increase in amplitude and reached its maximum at 4 μm. Further increasing amplitude reduced the etching rate and affected the morphology of the SiNWs. Adjusting the vibration frequency would result in a maximum etching rate at a frequency of 20 Hz, and increasing the frequency will not help to improve the etching effects.

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Automated, deep reactive ion etching free fiber coupling to nanophotonic devices

Cited by 4 publications

References 32 publications

The dependence of timing jitter of superconducting nanowire single-photon detectors on the multi-layer sample design and slew rate

The dependence of timing jitter of superconducting nanowire single-photon detectors on the multi-layer sample design and slew rate

Optimizing the growth conditions of Al mirrors for superconducting nanowire single-photon detectors

Fabrication of Silicon Nanowires by Metal-Assisted Chemical Etching Combined with Micro-Vibration

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