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2023
DOI: 10.1039/d2nr04494c
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The dependence of timing jitter of superconducting nanowire single-photon detectors on the multi-layer sample design and slew rate

Abstract: We investigated the timing jitter of superconducing nanowire single-photon detectors (SNSPDs) and found a strong dependence on the detector response. By varying the multi-layer structure, we observed changes in pulse...

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Cited by 5 publications
(4 citation statements)
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References 34 publications
(37 reference statements)
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“…For applications, simultaneously high SDE and I sw are desired since a higher I sw yields a higher detection pulse, which reduces not only the requirements for pulse detection with the readout electronics but also the timing jitter induced by electrical noise. [ 16,46 ] To compare these two performance metrics, Figure shows the SDE against I sw (open symbols representing the non‐irradiated detectors, a red frame highlighting saturating SDE, and dashed lines indicating the simulated SDE upper limit). It is interesting to note how I sw and SDE compare between the 8 nm and the 10 nm devices with an SDE between 39% and 46%: While providing a similar efficiency, the 10 nm devices offer twice as much switching current, 20 µA instead of 10 µA.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…For applications, simultaneously high SDE and I sw are desired since a higher I sw yields a higher detection pulse, which reduces not only the requirements for pulse detection with the readout electronics but also the timing jitter induced by electrical noise. [ 16,46 ] To compare these two performance metrics, Figure shows the SDE against I sw (open symbols representing the non‐irradiated detectors, a red frame highlighting saturating SDE, and dashed lines indicating the simulated SDE upper limit). It is interesting to note how I sw and SDE compare between the 8 nm and the 10 nm devices with an SDE between 39% and 46%: While providing a similar efficiency, the 10 nm devices offer twice as much switching current, 20 µA instead of 10 µA.…”
Section: Resultsmentioning
confidence: 99%
“…Subsequently, the NbTiN films were patterned into cloverleaf structures and SNSPDs using electron beam lithography and reactive ion etching, followed by optical lithography and gold evaporation for contact pad fabrication. [46] The detector design consisted of a 100 nm wide wire in a meander form with a fill factor of 50%, and a total active area of 10 µm × 10 µm. The cloverleaf structures were fabricated in order to perform magnetotransport measurements in van-der-Pauw geometry [47,48] with an active area of 10 µm × 10 µm and to correlate the results of macroscopic transport with the He ion fluence dependent performance metrics of the corresponding SNSPDs.…”
Section: Methodsmentioning
confidence: 99%
“…The detectors were characterized in a cryogenic probe station from Janis operated at 4.5 K sample surface temperature. Here, a calibrated parallel beam is used that allows flood illumination and fast characterization of multiple devices [19]. By broadening the beam to a diameter of about 500 µm using lensed optics, a homogeneous beam spot is generated with a reduced incident photon flux per 10 µm × 10 µm by means of geometric attenuation.…”
Section: Detector Fabrication and Characterizationmentioning
confidence: 99%
“…NV centers in diamond [9], 2D materials [10], or quantum dots [11]), spin-photon interfaces [12], and detectors. For the latter, superconducting (nanowire) single-photon detectors (SNSPDs) [13][14][15][16][17][18][19] have prevailed over other potential candidates such as transition edge sensors [20] or single-photon avalanche diodes [21]. In particular, SNSPDs outperform the other systems by their excellent timing resolution in the range of a few ps [22] combined with their high system detection efficiency in the visible to near-infrared [23] when integrated into a resonator structure.…”
Section: Introductionmentioning
confidence: 99%