Augmenting the spin properties of shallow implanted NV-centers by CVD-overgrowth

Staudacher, T.; Ziem, Florestan; Häussler, L.; Stöhr, Rainer; Steinert, Steffen; Reinhard, Friedemann; Scharpf, Jochen; Denisenko, Andrej; Wrachtrup, Jörg

doi:10.48550/arxiv.1208.4216

Cited by 2 publications

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“…For example by decreasing the implantation energy to about 10 keV and using the present mask technology should allow for a pair creation efficiency of almost 100 %. Recently techniques like nano implantation with positioning accuracies of 20 nm 23,31 and shallow implanted defect showing dephasing times not degenerated by surface proximity [32][33][34] have improved considerably. With the aid of those techniques controlled generation of large scale arrays seem to be within reach, paving the way towards room temperature quantum devices.…”

Section: Entanglement Is the Central Yet Fleeting Phenomena Of Quantu...mentioning

confidence: 99%

Room-temperature entanglement between single defect spins in diamond

et al. 2013

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and macroscopic diamond 10 . Here we experimentally demonstrate entanglement between two engineered single solid-state spin quantum bits (qubits) at ambient conditions. Photon emission of defect pairs reveals ground-state spin correlation. Entanglement (fidelity = 0.67 ± 0.04) is proved by quantum state tomography. Moreover, the lifetime of electron spin entanglement is extended to milliseconds by entanglement swapping to nuclear spins. The experiments mark an important step towards a scalable room-temperature quantum device being of potential use in quantum information processing as well as metrology.Engineering entangled quantum states is a decisive step in quantum technology. Although entanglement among weakly interacting systems such as photons has been demonstrated already in the early stages of quantum optics, deterministic generation of entanglement in more complex systems such atoms or ions, not to mention solids, is a relatively recent achievement 11 . Usually in solid-state systems rapid dephasing ceases any useful degree of quantum correlations. Either decoupling must be used to protect quantum states or careful materials engineering is required to prolong coherence. Most often however, and this is especially important for solid-state systems, one needs to resort to low (milliKelvin) temperatures to achieve sufficiently robust and longlasting quantum coherence. Spins are sufficiently weakly coupled to their environment to allow for the observation of coherence at room temperatures.Diamond defect spins are particularly interesting solid-state spin qubit systems. A number of hallmark demonstrations such as single-, two-and three-qubit operations, high-fidelity single-shot readout 12 , one-and two-qubit algorithms 13 , and entanglement between nuclear and electron and nuclear spin qubits have been achieved 6,14 . Different schemes to scale the system to a larger number of entangled electron spins have been proposed [15][16][17] . A path towards room-temperature entanglement is strong coupling among the ground-state spin magnetic dipole moment of adjacent defects centres. This mutual dipolar interaction scales as distance d −3 and should be larger than the interaction of each electron spin with the residual paramagnetic impurities or nuclear spin moments in the lattice (Fig. 1d). Typical cutoff distances for strong interaction are thus limited by the electron spin dephasing time (milliseconds) to be around 30 nm. Here we demonstrate entanglement between two electron and nuclear spins at a distance of approximately 25 nm. At these distances magnetic dipole coupling is strong enough to attain high-fidelity entanglement while being able to address the spins individually by super-resolution optical microscopy 18 . The optical as well as spin physics of nitrogen vacancy (NV) defects in diamond has been subject to numerous investigations 11,19 . The fluorescence intensity of the strongly allowed optical transition between ground and excited spin triplet states depends on the magnetic quantum number of the groun...

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Section: Entanglement Is the Central Yet Fleeting Phenomena Of Quantu...mentioning

confidence: 99%

Room-temperature entanglement between single defect spins in diamond

et al. 2013

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“…Figure 4 shows the values of T 2 for n-i-n junctions with various w i , along with the Hahn echo decay curve for w i = 1 µm, shown in the inset. The values of T 2 were approximately 9 µs, typical for an implanted ensemble of NV centers, 24,25) regardless of the value of w i . Therefore, T 2 was maintained while increasing the NV − ratio, demonstrating that the variation of w i had no effect on T 2 of the NV centers in the i-layer.…”

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Charge-state control of ensemble of nitrogen vacancy centers by n–i–n diamond junctions

Shimizu

Makino

Iwasaki

et al. 2018

Appl. Phys. Express

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We fabricated n-type–intrinsic–n-type (n–i–n) diamond junctions to stabilize negatively charged nitrogen vacancy (NV−) centers. An ensemble of NV centers was generated in a high-purity intrinsic diamond in order to maintain the spin coherence time. The Fermi-energy of the i-layers was controlled by band bending at the two n–i junctions. We confirmed that the NV centers can be modulated toward NV− centers by decreasing the width of the i-layers between adjacent n-layers. The spin coherence time for the NV− centers was maintained even for narrow i-layers.

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Augmenting the spin properties of shallow implanted NV-centers by CVD-overgrowth

Cited by 2 publications

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Room-temperature entanglement between single defect spins in diamond

Room-temperature entanglement between single defect spins in diamond

Charge-state control of ensemble of nitrogen vacancy centers by n–i–n diamond junctions

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