Charge-state control of ensemble of nitrogen vacancy centers by n–i–n diamond junctions

Shimizu, Masaru; Makino, Toshiharu; Iwasaki, Takayuki; Tahara, Kosuke; Kato, Hiromitsu; Mizuochi, Norikazu; Yamasaki, Satoshi; Hatano, Mutsuko

doi:10.7567/apex.11.033004

Cited by 10 publications

(4 citation statements)

References 25 publications

(26 reference statements)

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“…1B, inset) (32). The location in depth of the observed defects is consistent with isolation to the i-type layer, as expected from formation energy calculations (35) and the local Fermi level (36). This depth localization provides an alternative to delta-doping (37), which is not possible with intrinsic defects, facilitating positioning and control in fabricated devices ( Fig.…”

Section: Isolated Single Defects In a Semiconductor Devicesupporting

confidence: 82%

“…The location in depth of the observed defects is consistent with isolation to the i-type layer. This is to be expected because formation energy calculations (35) indicate that the neutral charge state is energetically favorable when the Fermi level is between ~1.1 and 2 eV, and this condition must be satisfied somewhere in the i-type layer (32,36). This depth localization provides an alternative to delta doping (37), which is not possible with intrinsic defects, facilitating positioning and control in fabricated devices (fig.…”

Section: Isolated Single Defects In a Semiconductor Devicementioning

confidence: 97%

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Electrical and optical control of single spins integrated in scalable semiconductor devices

Anderson

Bourassa

Miao

et al. 2019

Science

212

258

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Spin defects in silicon carbide have exceptional electron spin coherence with a nearinfrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricate diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge state control and broad Stark shift tuning exceeding 850 GHz. Surprisingly, we show that charge depletion results in a narrowing of the optical linewidths by over 50 fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while utilizing classical semiconductor devices to control scalable spin-based quantum systems.

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Section: Isolated Single Defects In a Semiconductor Devicesupporting

confidence: 82%

Section: Isolated Single Defects In a Semiconductor Devicementioning

confidence: 97%

Electrical and optical control of single spins integrated in scalable semiconductor devices

Anderson

Bourassa

Miao

et al. 2019

Science

212

258

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“…They can therefore be used as a footprint for the centre's environment and we propose to use this technique for the quality control of optical centres. Much effort was made to stabilise [85,86] and/or tune and control the charge state of colour centres, especially with the NV centre: chemically [94][95][96][97], optically [98], and electrically [17,18,99,100]. It was shown by a single-shot chargestate readout that the NV centre charge state is constantly 'jumping' between NV − and NV 0 under light excitation due to photo-induced ionisation and recharging [101].…”

Section: Charge State and Fluorescence Stability-time Trace Analysismentioning

confidence: 99%

Screening and engineering of colour centres in diamond

Lühmann¹,

Raatz²,

John³

et al. 2018

J. Phys. D: Appl. Phys.

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We present a high throughput and systematic method for screening of colour centres in diamond. We aim at the search and reproducible creation of new optical centres, down to the single level, potentially of interest for the wide range of diamond-based quantum applications. The screening method presented here should moreover help identifying some already indexed defects among hundreds in diamond [1] but also some promising defects of still unknown nature, such as the recently discovered ST1 centre [2,3]. We use ion implantation in a systematic manner to implant several chemical elements. Ion implantation has the advantage to address single atoms inside the bulk with defined depth and high lateral resolution, but the disadvantage of defect production such as vacancies. The sample is annealed in vacuum at different temperatures (between 600°C and 1600°C with 200°C steps) and fully characterised at each step in order to follow the evolution of the defects: formation, dissociation, diffusion, reformation and charge state, at the ensemble level and, if possible, at the single centre level. We review the unavoidable ion implantation defects (with the example of the GR1 and 3H centres), discuss ion channeling and thermal annealing and estimate the diffusion of vacancies, nitrogen and hydrogen. We use different characterisation methods best suited for our study (from widefield fluorescence down to sub-diffraction optical imaging of single centres) and discuss reproducibility issues due to diamond and defect inhomogeneities. Nitrogen is also implanted as a reference, taking advantage of the large knowledge on NV centres as a versatile sensor in order to retrieve or deduce the conditions and local environment in which the different implanted chemical elements are embedded. We show here the preliminary promising results of a long-term study and focus on the elements O, Mg, Ca, F and P, from which fluorescent centres were found.

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“…In spite of the detrimental impact of charge state instability on spin polarization [13,17], and consequently on the sensing capabilities of NV centers, a clear understanding of charge dynamics of NV ensembles is lacking. * rakshyakar.giri@iit.it Attempts to control the charge states of NVs by manipulating the Fermi level are reported in the literature [11,[18][19][20][21][22]. It was demonstrated that an ensemble of NV centers could be stable enough to be used as a charge based data storage medium [23,24].…”

Section: Introductionmentioning

confidence: 99%

Selective measurement of charge dynamics in an ensemble of nitrogen-vacancy centers in nanodiamond and bulk diamond

et al. 2019

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Nitrogen-vacancy (NV) centers in diamond have attracted considerable interest in sensing of weak magnetic fields, such as those created by biological systems. Detecting such feeble signals requires near-surface NV centers, to reduce the distance between NVs and sources. Moreover, dense ensembles of NVs are highly desirable to reduce measurement time. However, robust charge state switching is often observed in these systems, resulting in a complex interplay between charge and spin dynamics that can reduce the attainable level of spin polarization, and consequently, sensitivity. Understanding the mechanisms behind charge state switching is, therefore, crucial to developing NV based sensors. Here, we demonstrate a novel method to selectively measure charge dynamics in an ensemble of NVs by quenching the spin polarization using an off-axis magnetic field. Utilizing this technique, we show that, in nanodiamonds, charge state instability increases with increasing NV density. In the case of bulk single crystal diamond, we show that NV centers located near the surface are more stable in the neutral (NV 0 ) charge state, while the negatively charged (NV − ) form is more stable in bulk. arXiv:1812.02702v1 [cond-mat.mes-hall]

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Charge-state control of ensemble of nitrogen vacancy centers by n–i–n diamond junctions

Cited by 10 publications

References 25 publications

Electrical and optical control of single spins integrated in scalable semiconductor devices

Electrical and optical control of single spins integrated in scalable semiconductor devices

Screening and engineering of colour centres in diamond

Selective measurement of charge dynamics in an ensemble of nitrogen-vacancy centers in nanodiamond and bulk diamond

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