Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma

Abstract

International audienceAuger electron spectroscopy (AES) was used to investigate the processes taking place during the initial stages of InP(100) surfaces nitridation. This AES study combined with electrical measurements (intensity-potential) shows that the processes greatly differ depending on the nitridation angles. Results show that with grazing angle for nitrogen flow, the nitridation process is more efficient. Results obtained with AES spectra are coherent with electrical measurements : Hg/InN/InP(100) Schottky diodes present better electrical characteristics in the case of a grazing flow. That means, the adsorption of nitrogen on the surface is more important for this configuration

Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode

“…InP substrate surface nitridation at a lower temperature is found to be one of solutions to obtain InN buffer layers before the InN films growth. Different methods have been investigated for the nitridation of InP (100) surfaces [3], in our study we have used the plasma nitridation method. To understand properties of the InN/InP interface obtained by nitridation, electrical characterization of Schottky diodes based on the InP and InN components has been the subject of several recent studies [3,4].…”

“…Different methods have been investigated for the nitridation of InP (100) surfaces [3], in our study we have used the plasma nitridation method. To understand properties of the InN/InP interface obtained by nitridation, electrical characterization of Schottky diodes based on the InP and InN components has been the subject of several recent studies [3,4]. Talbi et al realized Schottky diodes based on InN/InP with mercury (Hg) contact.…”

Activation and Decomposition of N2 on Heated Tungsten Filament Surfaces

“…In addition, N-atom distribution will be affected by the gradients in gas temperature, T g . The gas-phase loss rate of N atoms in the recombination reaction 2N þ N 2 f 2N 2 , whose rate coefficient is 8.27 Â 10 À34 exp(500/ T g ) cm 6 s À1 , 37 is many orders of magnitude lower than that on the walls with a typical loss probability on quartz, γ, ∼10 À4 À10 À3 . 38,39 Since we do not know the exact value of γ for our reactor walls coated with SiO 2 , we used γ = 5 Â 10 À4 in the following analysis, although some calculations were carried out with γ = 1 Â 10 À4 .…”

“…Nitridation is one of the most fundamental surface modification techniques. Nitrogen plasma is commonly used for this purpose. − In nitrogen plasma, however, ionic species are produced in addition to atomic nitrogen, and these charged species may damage substrate surfaces.…”