Auger electron spectroscopy and electron energy loss spectroscopy studies of the formation of silicon nitride by implanting low energy nitrogen ions into silicon

Lieske, N.; Hezel, Rudolf

doi:10.1016/0040-6090(81)90049-3

Cited by 16 publications

(4 citation statements)

References 9 publications

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“…A linear relationship between (No -NA) and XGe ~, the mole fraction of Ge in liquid indium solution, was observed up to Xce' = 0.17, corresponding ~o (ND -N,) = 2.6 x 10'S/cm3; the distribution coefficient was determined to be k = 0.011. Similar results were obtained by Astles et al (6), who grew layers on <111> A, <111> B, and <100> substrates at ~650~…”

Section: Germanium Doping Of Inp Films Grown By Liquid Phase Epitaxysupporting

confidence: 89%

“…In order to minimize the problems associated with lateral oxidation, it is necessary to eliminate any silicon dioxide which may be present between the silicon nitride layer and the silicon surface. This is achieved by forming the silicon nitride layer by nitrogen ion implantation into the silicon substrate (4)(5)(6)(7)(8). The nitride layer thus formed is beneath the silicon surface, its exact position and thickness being dependent upon the implantation parameters.…”

Section: Ion Beam Nitridationmentioning

confidence: 99%

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Device Processing Aspects of Ion Beam Nitridation

Troxell

Moss

1984

J. Electrochem. Soc.

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Silicon nitride local oxidation masking layers fabricated by low energy nitrogenion implantation into silicon have been employed in the fabrication of n-channel silicon-gate MOSFET's. Processing considerations which are unique to the application of these very thin (10 nm) silicon nitride films are detailed. The effects of oxygen contamination during implantation are described, as are those of subsequent wafer processing steps such as RCA cleaning and oxygen plasma photoresist stripping. It is also shown that resputtered material from the wafer holder can result in iron contamination of the resulting silicon nitride films. Finally, we show that careful attention to these possible problems can produce transistors with reasonable current-voltage characteristics, as compared to conventionally processed devices.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-17 to IP

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Section: Germanium Doping Of Inp Films Grown By Liquid Phase Epitaxysupporting

confidence: 89%

Section: Ion Beam Nitridationmentioning

confidence: 99%

Device Processing Aspects of Ion Beam Nitridation

Troxell

Moss

1984

J. Electrochem. Soc.

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“…Of course the current is now much more dependent on the nitride, particularly at higher implant energies. It is probable that annealing causes the nitride to become stoichiometric Si3N4 as has been shown with in situ Auger electron spectroscopy following lowenergy nitrogen implantation and thermal annealing (19).…”

Section: Annealing Resultsmentioning

confidence: 94%

Silicon Surface Barrier Modification by Low‐Energy Nitrogen Ion Implantation

Ringel

Ashok²

1987

J. Electrochem. Soc.

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The influence of ultrathin (≲5 nm) amorphous silicon nitride films formed by low‐energy (200–600 eV) nitrogen ion implantation into silicon on the electrical characteristics of metal‐Si contacts has been studied. The interface characteristics are determined by both the growth of the nitride layer due to the implantation and the modification of the Si band bending as a result of the ion bombardment damage. It is found that the barrier formation and carrier transport mechanisms are considerably more complex than in other schemes of barrier control. A definite correlation between the electrical properties and implant energy is observed.

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“…The formation of chemical bonds in Si is also observed during high-dose implantation of ions of active elements [6][7][8][9]. The composition, structure, and properties of near-surface layers of ion-doped samples have been studied quite well by now.…”

Section: Introductionmentioning

confidence: 99%