Au–Sn Catalyzed Growth of Ge1–xSnx Nanowires: Growth Direction, Crystallinity, and Sn Incorporation

Sun, Yong-Lie; Matsumura, Ryo; Jevasuwan, Wipakorn; Fukata, Naoki

doi:10.1021/acs.nanolett.9b02395

Cited by 23 publications

(33 citation statements)

References 45 publications

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“…Changing the concentration of Sn in AuSn alloy catalyst in a wide range (0–86%) directly affects the density of GeSn NWs as presented in Figure a–f. [ 104 ] It can be seen from Figure 12 that the density of GeSn NWs decreases with the increasing of Sn in AuSn alloy, except for Figure 12a. The Sn composition in AuSn alloy can not only influence the density of NWs but also the NW growth direction.…”

Section: Gesn Nw Controlmentioning

confidence: 97%

“…It has been reported that the growth direction of GeSn NWs has a strong dependence on the compositional changes in the catalysts. [ 104,112 ] The growth direction of NWs with high Sn content is mostly ⟨110⟩, whereas NWs with low Sn content tend to growth along the ⟨111⟩ direction as presented in Figure 12g. The experimental results are explained with the model developed by Schmidt et al [ 113 ] by taking advantage of surface energy.…”

Section: Gesn Nw Controlmentioning

confidence: 99%

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Rational Control of GeSn Nanowires

Gong

Zheng

Cabarrocas

et al. 2022

Physica Rapid Research Ltrs

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Research on Si compatible direct bandgap semiconductors is a hot topic due to the high demand of Si compatible optoelectronics. The group IV compounds, namely GeSn, has been studied extensively in its different forms: thin films, nanowires (NWs), and nanocrystals. Importantly, the attention being paid to GeSn NWs has increased in recent years thanks to two key factors: 1) better crystalline quality due to an easier strain relaxation in NWs; and 2) extraordinary Sn content (up to 30 at.%) associated to a very fast NW growth (>20 nm s−1). Therefore, to effectively control the growth of GeSn NWs is a key issue for a practical application. Herein, various control aspects including the nature of the catalysts, the morphology of the NWs, and their Sn content are presented.

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Section: Gesn Nw Controlmentioning

confidence: 97%

Section: Gesn Nw Controlmentioning

confidence: 99%

Rational Control of GeSn Nanowires

Gong

Zheng

Cabarrocas

et al. 2022

Physica Rapid Research Ltrs

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“…There are a numbers of recent reports [ 234 ] on synthesising GeSn nanomaterials due to their potential application in fields such as electronics [ 235 ], optoelectronics [ 236 ] and energy storage [ 237 ] (see Figure 10 ). GeSn nanowires have been principally grown to date using pre-synthesised metal catalytic seeds, such as Au [ 238 ], AuAg [ 237 ], AuSn [ 239 ] and Sn [ 116 ] nanoparticles. Barth et al [ 126 ] were the first to report the formation of self-seeded GeSn nanowires; formed by heating bis[ N,N -bis(trimethylsilyl)amido]tin(II) and bis[ N,N -bis(trimethylsilyl)amido]Ge(II) precursors dispersed in dodecylamine in a microwave.…”

Section: Growth Of Self-seeded Ge Nanowire Alloysmentioning

confidence: 99%

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

2021

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Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. The widely used three-phase bottom-up growth method utilising a foreign catalyst metal or metalloid is by far the most popular for Ge nanowire growth. However, to fully utilise the potential of Ge nanowires, it is important to explore and understand alternative and functional growth paradigms such as self-seeded nanowire growth, where nanowire growth is usually directed by the in situ-formed catalysts of the growth material, i.e., Ge in this case. Additionally, it is important to understand how the self-seeded nanowires can benefit the device application of nanomaterials as the additional metal seeding can influence electron and phonon transport, and the electronic band structure in the nanomaterials. Here, we review recent advances in the growth and application of self-seeded Ge and Ge-based binary alloy (GeSn) nanowires. Different fabrication methods for growing self-seeded Ge nanowires are delineated and correlated with metal seeded growth. This review also highlights the requirement and advantage of self-seeded growth approach for Ge nanomaterials in the potential applications in energy storage and nanoelectronic devices.

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“… 26 − 29 Bottom-up growth of GeSn nanowires was mainly achieved by using in situ formed Sn as a catalyst or using third party catalysts such as Au, AuAg, AuSn, etc. 30 , 31 Growth methods and critical growth constraints for the growth of Ge 1– x Sn x nanowires are detailed in a couple of recent reviews. 32 , 33 However, in most of these growth methods, Sn incorporation in the alloy nanowire is limited to below 10 atom %.…”

Section: Introductionmentioning

confidence: 99%

Stretching the Equilibrium Limit of Sn in Ge_1–xSn_x Nanowires: Implications for Field Effect Transistors

Biswas

Doherty

Galluccio

et al. 2021

ACS Appl. Nano Mater.

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Ge 1– x Sn x nanowires incorporating a large amount of Sn would be useful for mobility enhancement in nanoelectronic devices, a definitive transition to a direct bandgap for application in optoelectronic devices and to increase the efficiency of the GeSn-based photonic devices. Here we report the catalytic bottom-up fabrication of Ge 1– x Sn x nanowires with very high Sn incorporation ( x > 0.3). These nanowires are grown in supercritical toluene under high pressure (21 MPa). The introduction of high pressure in the vapor–liquid–solid (VLS) like growth regime resulted in a substantial increase of Sn incorporation in the nanowires, with a Sn content ranging between 10 and 35 atom %. The incorporation of Sn in the nanowires was found to be inversely related to nanowire diameter; a high Sn content of 35 atom % was achieved in very thin Ge 1– x Sn x nanowires with diameters close to 20 nm. Sn was found to be homogeneously distributed throughout the body of the nanowires, without apparent clustering or segregation. The large inclusion of Sn in the nanowires could be attributed to the nanowire growth kinetics and small nanowire diameters, resulting in increased solubility of Sn in Ge at the metastable liquid–solid interface under high pressure. Electrical investigation of the Ge 1– x Sn x ( x = 0.10) nanowires synthesized by the supercritical fluid approach revealed their potential in nanoelectronics and sensor-based applications.

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Au–Sn Catalyzed Growth of Ge_1–xSn_x Nanowires: Growth Direction, Crystallinity, and Sn Incorporation

Cited by 23 publications

References 45 publications

Rational Control of GeSn Nanowires

Rational Control of GeSn Nanowires

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

Stretching the Equilibrium Limit of Sn in Ge_1–xSn_x Nanowires: Implications for Field Effect Transistors

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Au–Sn Catalyzed Growth of Ge1–xSnx Nanowires: Growth Direction, Crystallinity, and Sn Incorporation

Cited by 23 publications

References 45 publications

Rational Control of GeSn Nanowires

Rational Control of GeSn Nanowires

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

Stretching the Equilibrium Limit of Sn in Ge1–xSnx Nanowires: Implications for Field Effect Transistors

Contact Info

Product

Resources

About

Au–Sn Catalyzed Growth of Ge_1–xSn_x Nanowires: Growth Direction, Crystallinity, and Sn Incorporation

Stretching the Equilibrium Limit of Sn in Ge_1–xSn_x Nanowires: Implications for Field Effect Transistors