Atomistic study of SiN based ReRAM with high program/erase cycle endurance

Abstract

We used ab initio calculations to clarify the atomistic origin of memory state switching in SiN based ReRAMs. The results of our calculations indicate that a N vacancy with a H atom acts as the high resistance state (HRS) and a N vacancy without a H atom is low resistive state (LRS). Moreover, we find that HRS and LRS can be switched by charge injection and removal. These results indicate that having N vacancies in the SiN layer can enable SiN based ReRAMs with high program/erace cycle endurance.

Resistive switching memory using buckybowl sumanene-inserted bilayer graphene

“…are being investigated for ReRAM materials. [2][3][4][5][6][7][8][9][10][11][12] There are several theories as to the principle of operation of ReRAM using metal oxides, and the redox reaction model using oxygen vacancies as the conductive path is considered to be the most promising. 13) Due to the characteristic of using oxygen vacancies, device degradation is inevitable, and ReRAM is still in the research stage due to device-to-device variation and device degradation.…”