Resistive switching memory using buckybowl sumanene-inserted bilayer graphene

Abstract

The bowl-shaped molecules of the nanocarbon material, called sumanene, have structural flexibility (bowl inversion). In the case of the sumanene molecule used as an intercalant between graphene layers, it has been predicted that holes and electrons are unevenly distributed according to the bowl inversion. Using the property of sumanene molecules, we expected that resistive switching for the nonvolatile memory applications could be achieved by the sumanene-inserted bilayer graphene. In this study, MIM devices with sumanene-inserted bilayer graphene are fabricated. As a result, it can be observed that the resistance of the sumanene-inserted bilayer graphene changes by applying voltage, demonstrating the resistive switching characteristics. This result implies the possibility of realizing novel ultrathin resistive memory device by using nanocarbon technologies.

Metal–semiconductor transition in bilayer graphene by bowl inversion of monofluorosumanene

“…43,44) Following these theoretical predictions, experimental studies have confirmed that sumanene-intercalated bilayer graphene can operate as a resistive switching device through control over the sumanene conformation with a gate electric field. 45,46) Recently, a unique sumanene derivative, monofluorosumanene, has been synthesized by the substitution of one hydrogen atom terminating the benzylic edges of sumanene by an F atom. 47) Thus, monofluorosumanene has structural asymmetry with respect to the fluorination site in the curved C-C network.…”