Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich Ge<inf>x</inf>Se<inf>1−x</inf> materials for selector applications

Dependence of Switching Probability on Operation Conditions in GexSe1–xOvonic Threshold Switching Selectors

“…The stochastic Weibull distribution of ton/toff and the trade-off between the bias and time can be explained by the conductive filament formation/deformation during switch-on/off [8]. The extrapolations toward the switching speed at 10 ns with 99.7% switching probability agree reasonably well for both pulse waveforms.…”

“…ELECTOR devices are critical in resistive-switching randomaccess memory (RRAM) arrays for suppressing the sneak path currents that limit the maximum size and reliability of the RRAM array, as shown in Fig.1a [1]. Ovonic threshold switching (OTS) chalcogenide material (such as GexSe1-x) based selectors have gained increasing attention because of their high on-state drive current (> 10 MA/cm 2 ), good half-bias non-linearity, fast switching speed, and excellent endurance, compared with other selectors [2][3][4][5][6][7][8].…”

Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

“…This is attributed to area-independence transient Ge chains and Ge-based octahedra in the ON state. [24,31,32] To be clear, the I ON is lower than the previously reported one, which is due to the series resistance (1.1 kΩ) and different device structures (W plug in previous work). The OFF current (I OFF ) keeps 10 nA, leading to >10 5 large selectivity (I ON /I OFF ).…”

RTN in GexSe1-x OTS selector devices

“…However, the memory operation, the reliability and the maximum size of RRAM crossbar array are limited by the parasitic sneak paths, which are induced by the large leakage current flowing through the unselected RRAM devices [1][2]. To suppress the sneak paths, the one-selector-one-RRAM (1S1R) structure has been proposed [3][4][5][6]. The ovonic threshold switching (OTS) selector, which is based on a field-induced volatile switching mechanism, has been demonstrated by Ovshinsky in chalcogenide materials [1].…”

“…These materials have gained increasing interest from researchers for their high on-state current and high non-linearity (and hence low leakage current), which are required for the implementation of large memory arrays. Among the studied OTS materials, GexSe1-x selector has become a strong contender because of its class-leading on-state current, high half-bias nonlinearity, fast switching, suitable voltage range and excellent endurance [4][5][6].…”