RTN in GexSe1-x OTS selector devices

Chai, Zheng; Zhang, Weidong; Degraeve, R.; Zhang, Chenglong; Marsland, John; Fantini, A.; Garbin, Daniele; Clima, Sergiu; Goux, L.; Kar, Gouri Sankar

doi:10.1016/j.mee.2019.110990

Cited by 3 publications

(4 citation statements)

References 9 publications

(22 reference statements)

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“…55 Another report on GexSe1-x-based devices showing the observation of RTS in ovonic threshold switching mechanism after the forming process. 56 the high voltage regime of more than 0.6 V. This RTS was more likely to be observed in the early stage of the ON state rather than throughout the ON state. This could be attributed to the competing nature of the two parameters, i.e.…”

Section: Reliability Aspects Of Dm: Device Endurance and Observation Of Random Telegraph Signal (Rts)mentioning

confidence: 87%

“…In Cu-doped Ge 0.3 Se 0.7 devices, it is suggested that the RTS presence in the device is potentially due to thermally activated movement of Cu species within ionic or redox “double-site traps” . Another report on Ge x Se 1– x -based devices showed the observation of RTS in ovonic threshold switching mechanism after the forming process Figure shows different RTS observed in the DM structure during the ON state of the device under 0.4 V voltage amplitude.…”

Section: Reliability Aspects Of Dm: Device Endurance and Observation ...mentioning

confidence: 99%

“…55 Another report on Ge x Se 1−x -based devices showed the observation of RTS in ovonic threshold switching mechanism after the forming process. 56 Figure 12 shows different RTS observed in the DM structure during the ON state of the device under 0.4 V voltage amplitude. Both bimodal and multilevel RTS were observed within the same structure but under different writing cycles.…”

Section: Acs Applied Electronic Materialsmentioning

confidence: 99%

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Unidirectional Threshold Switching Induced by Cu Migration with High Selectivity and Ultralow OFF Current under Gradual Electroforming Treatment

Dananjaya

Loy

Lew

2019

ACS Appl. Electron. Mater.

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Gradual electroforming process was implemented on pristine Pt/HfOx/Cu/Pt structure to realize volatile threshold switching characteristics of a diffusive memristor. The reported devices exhibit stable unidirectional threshold switching properties with high selectivity of >10 7 and ultralow OFF current of ~100 fA for over 10 4 endurance cycles. Nucleation theory on spheroidal-shaped metallic filament growth is used to extensively discuss the structural changes of the device after gradual forming treatments by analysing the applied bias amplitude dependency of the finite delay time required by the device to turn ON under external electric field. On the other hand, Rayleigh instability model was implemented for the aforementioned spheroidal metallic nucleus to explain the relaxation dynamics of the device. It was shown that the relaxation time of the device depends on the initial profile of the nucleus within the insulating layer. The broadening of ON current distribution of the device was observed during the device endurance test. This is correlated to the presence of random telegraph signal (RTS) during the ON state of the device.

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Section: Reliability Aspects Of Dm: Device Endurance and Observation Of Random Telegraph Signal (Rts)mentioning

confidence: 87%

Section: Reliability Aspects Of Dm: Device Endurance and Observation ...mentioning

confidence: 99%

Section: Acs Applied Electronic Materialsmentioning

confidence: 99%

See 1 more Smart Citation

Unidirectional Threshold Switching Induced by Cu Migration with High Selectivity and Ultralow OFF Current under Gradual Electroforming Treatment

Dananjaya

Loy

Lew

2019

ACS Appl. Electron. Mater.

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“…A surprising result is obtained from the 5 nm CN layer, as despite having a factor of nearly 4 difference in first fire voltage and a factor of 4 difference in thickness, after first fire the threshold voltage differs only by 25%. A possible explanation for this is that the first-fire makes a percolative path of defects that facilitate OTS switching at lower voltages 26 . A thicker layer may have a longer path length but still exhibit a comparable switching voltage.…”

Section: Threshold Voltage Analysismentioning

confidence: 99%

Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

Keukelier

Opsomer

Devulder

et al. 2021

Journal of Applied Physics

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In order to make 3D crossbar memory architectures viable, selector elements with highly non-linear current-voltage (IV) characteristics are required. Ovonic Threshold Switching (OTS) is a highly non-linear phenomenon observed in amorphous chalcogenides, such as GeSe, that shows promise for application in selectors. In this paper the impact of alloying with metallic (Zr), metalloid (B, Sb) and non-metallic (C, N) elements as a function of their concentration on the thermal stability and switching properties of alloyed GeSe layers is studied. In case of the thermal stability analysis, the key parameter that is tracked is the crystallisation temperature (T c ) of the as-deposited amorphous films since OTS only occurs in amorphous materials. Using a simple metal-insulator-metal type test structure where the bottom electrode is scaled to 6 µm, the OTS properties of the alloyed layers are also compared. The pristine leakage current (I pris ), first fire voltage (V FF ) and threshold voltage (V th ) were determined using DC and pulsed (AC) measurements. Results indicate that C alloying in combination with sufficiently high nitrogen incorporation can extend the thermal stability above 600 • C with only low dependence on the C content. Amongst the metallic and metalloid elements, crystallisation temperature is strongly dependent on alloying concentration. In general, larger concentrations are needed to obtain a T c above 400 • C as compared to CN alloying. Electrical characterisation indicates a strong dependence of the first fire voltage and leakage current on the metallicity of the alloying element with only small to moderate concentrations required to influence electrical properties.

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Locally formed conductive filaments in an amorphous Ga2Te3 ovonic threshold switching device

Kim

et al. 2023

AIP Advances

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Ovonic threshold switching (OTS) selector devices based on chalcogenide materials are promising candidates for addressing the sneak current in high-density cross-point array structures owing to their high selectivity, high endurance, and fast switching speed. However, the OTS mechanism remains controversial and needs to be clarified. In this study, the formation of local conductive filaments (CFs) during threshold switching in an amorphous Ga2Te3 OTS selector device was investigated by electrical measurements and conductive-atomic force microscopy (C-AFM). The amorphous Ga2Te3 OTS selector device requires a forming process before the threshold switching processes. In addition, the off-current density ( JOFF) was dependent on the area of the bottom electrode. The difference between the threshold voltage ( VTH) and the hold voltage ( VH) increased as the applied higher electric field increased. The drift of VTH ( VTH drift) depended on the relaxation time and measurement temperature. The requirements of the forming process, area dependence of the JOFF, the difference between the VTH− VH with the applied electric field, and VTH drift are expected to depend on locally formed CFs. In addition, the analysis of the C-AFM results strongly supports the formation of local CFs during threshold switching in an amorphous Ga2Te3 OTS selector device. The understanding of OTS behavior uncovered in this study may provide guidance for improving the characteristics of and designing materials for future applications of OTS selector devices.

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RTN in GexSe1-x OTS selector devices

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Cited by 3 publications

References 9 publications

Unidirectional Threshold Switching Induced by Cu Migration with High Selectivity and Ultralow OFF Current under Gradual Electroforming Treatment

Unidirectional Threshold Switching Induced by Cu Migration with High Selectivity and Ultralow OFF Current under Gradual Electroforming Treatment

Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

Locally formed conductive filaments in an amorphous Ga2Te3 ovonic threshold switching device

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