Atomistic Design of Guiding Principles for High Quality Metal–Oxide–Nitride–Oxide–Semiconductor Memories: First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers

Yamguchi, Keita; Otake, Akira; Kamiya, Katsumasa; Shigeta, Yasuteru; Shiraishi, Kenji

doi:10.7567/jjap.50.04dd05

Cited by 16 publications

(13 citation statements)

References 5 publications

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“…This bond network comprises atoms having the ideal coordination number. In our previous paper, an N vacancy with multiple H atoms was found to be unstable due to steric hindrance [12]. Next, we examine the behavior of this defect during P/E operations.…”

Section: Resultsmentioning

confidence: 91%

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Atomistic study of SiN based ReRAM with high program/erase cycle endurance

Yamaguchi

Shirakawa

Shiraishi

2018

IEICE Electron. Express

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We used ab initio calculations to clarify the atomistic origin of memory state switching in SiN based ReRAMs. The results of our calculations indicate that a N vacancy with a H atom acts as the high resistance state (HRS) and a N vacancy without a H atom is low resistive state (LRS). Moreover, we find that HRS and LRS can be switched by charge injection and removal. These results indicate that having N vacancies in the SiN layer can enable SiN based ReRAMs with high program/erace cycle endurance.

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Section: Resultsmentioning

confidence: 91%

“…On the other hand, in the negative charge state, the three Si atoms form an isosceles triangle, slightly shorter compared to the one in the neutral charged state. In our previous study, we clarified that these structural and symmetrical changes are caused by the Jahn-Teller effect [12].…”

Section: Resultsmentioning

confidence: 93%

Atomistic study of SiN based ReRAM with high program/erase cycle endurance

Yamaguchi

Shirakawa

Shiraishi

2018

IEICE Electron. Express

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“…Next, we analyzed these models using three analytical methods: "Bader Charge Analysis", [22][23][24][25] "Formation energy 35) " and "COHP analysis". 26)…”

Section: Calculated Resultsmentioning

confidence: 99%

“…To consider the relative stabilities of the neutral state and the negatively and positively charged states, we calculated the formation energy of the charged system using the following equation. 35)…”

Section: Formation Energymentioning

confidence: 99%

Effect of carbon atoms on the reliability of potassium-ion electrets used in vibration-powered generators

Ohata¹,

Araidai²,

Shibata³

et al. 2022

Jpn. J. Appl. Phys.

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Potassium-ion electrets, which are key elements in vibration-powered microelectromechanical generators, can store negative charge almost permanently. However, our experiments show that the charge storing capability of potassium ion electrets is severely degraded when a SiC plate instead of the usual SiO2 plate is used in the fabrication process, indicating the negative influence of carbon incorporation. We theoretically studied the atomic and electronic structures of amorphous silica (a-SiO2) with and without potassium and carbon atoms using first-principles molecular-dynamics calculations. Our calculations show that negative charge accumulates in fivefold-coordinated Si atoms without carbon contamination. However, carbon contamination of the potassium-ion electret causes oxygen deficiencies in SiO2, hindering the formation of fivefold-coordinated Si atoms. As a result, carbon contamination causes degradation of the negative charge storing capability of potassium ion electrets.

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“…In previous studies, the incorporation of hydrogen atoms into nitrogen vacancies and its effect on electron trap level are analyzed by simulation. [27][28][29][30][31] To consider the relationship between the defect structure and trap level estimated in this study, the defect types and trap levels obtained from a previous calculation study 27) are displayed in Fig. 13.…”

Section: Resultsmentioning

confidence: 99%

Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

Seki¹,

Kamimuta²,

Mitani³

2018

Jpn. J. Appl. Phys.

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The energy level of electron traps in silicon nitride (SiN x ) thin films was investigated by discharging current transient spectroscopy (DCTS). Results indicate that the trap level of the SiN x thin films becomes deeper with decreasing composition (N/Si) and shallower after hydrogen annealing. The dependence of the trap level on the SiN x composition and the modulation of the trap level by hydrogen annealing are possibly related to the change in the number of Si-H bonds in the SiN x thin films.

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Atomistic Design of Guiding Principles for High Quality Metal–Oxide–Nitride–Oxide–Semiconductor Memories: First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers

Cited by 16 publications

References 5 publications

Atomistic study of SiN based ReRAM with high program/erase cycle endurance

Atomistic study of SiN based ReRAM with high program/erase cycle endurance

Effect of carbon atoms on the reliability of potassium-ion electrets used in vibration-powered generators

Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

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