Atomically smooth gallium nitride surfaces generated by chemical mechanical polishing with non-noble metal catalyst(Fe-N&lt;inf&gt;x&lt;/inf&gt;/C) in acid solution

Xu, Li; Pan, Guoshun; Zou, Chunli; Shi, Xiao‐Lei; Liu, Yuyu

doi:10.1109/icpt.2014.7017289

Cited by 2 publications

(5 citation statements)

References 38 publications

(36 reference statements)

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“…OVITO software is employed to observe and inspect the simulation results such as structure change, stress, dislocation [44]. [11][12][13][14][15][16][17][18][19][20] direction/G-face, and (c) [11][12][13][14][15][16][17][18][19][20] direction/N-face. Table 3.…”

Section: Methodsmentioning

confidence: 99%

“…With the same Ga-face, sliding in [11 ̅ 00] direction caused a broader amorphized zone along the pathway than the [112 ̅ 0] direction, as shown in Figs. 23(a) [11][12][13][14][15][16][17][18][19][20] direction/G-face, and [11][12][13][14][15][16][17][18][19][20] direction/N-face, respectively. Therefore, rolling on direction/Ga-face removed the highest number of atoms while rolling on [11][12][13][14][15][16][17][18][19][20] direction/N-face removed the lowest number of atoms.…”

Section: Effect Of Abrasive Size and Orientationmentioning

confidence: 99%

“…Besides, Zhang et al [36] observed a phase transformation phenomenon of the silicon substrate polished by a diamond abrasive. However, these previous studies only focused on the nanoscale level of deformation and material removal despite prior experimental researches have reported the sub-nanoscale of polishing [15][16][17]. In particular, hardly any studies have carefully considered the sub-nanoscale deformation and removal in spite of its central role in creating an ultra-smooth surface.…”

Section: Introductionmentioning

confidence: 99%

“…Evidently, Aida et al [15] reported that extremely small surface roughness of 0.18 nm could be achieved with a very low MRR of 17 nm/h. Xu et al [16] obtained a smoother 0.0518 nm surface roughness and a better MRR of 66.9 nm/h by using a metal catalyst in an acidic slurry. Besides, Wang et al [17] reported an excellent 0.065 nm surface roughness and a high MRR of 103 nm/h by using H2O2-SiO2-based slurry.…”

Section: Introductionmentioning

confidence: 99%

“…Surface morphology and von Mises stress distribution of different sliding directions and faces, sliding at 1.0 Å/ps and 5.0 Å depth: (a) [1-100] direction/Ga-face, (b) [11-20] direction/Gface, and (c)[11][12][13][14][15][16][17][18][19][20] direction/N-face.…”

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confidence: 99%

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Atomistic wear mechanisms and deformation evolution in polishing

Fang

Nguyen

2020

Preprint

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Our aim with this study was a new insight into the sub-nanoscale of polishing and provides the atomic view of the material removal and wear mechanisms by carrying out molecule dynamics simulation. We proposed and analyzed a model with a diamond abrasive particle that sliding or rolling on the surface of GaN workpieces. The authors investigated, step by step, the effects of polishing depths, speeds, abrasive sizes, and crystalline orientations on the wear mechanisms and material removal. The wear mechanisms of the sliding motion were adhering, ploughing, and cutting, depending on the depths. While the wear mechanisms of rolling motion are adhering and ploughing. Notably, in both stages of sliding and rolling, there is an existence of a critical point at 5.0 Å depth when we considered the deformation behaviors. Below that critical point, the GaN workpiece will present an elastic deformation. From the aforementioned point, the workpiece would be plastically deformed. Besides, from 10 Å depth, the dislocation began to appear and evolute simultaneously with the development of the maximum shear stress. The sliding motion on the Ga-face could remove a greater number of atoms than that of the N-face. Moreover, direction [1-100] on Ga-face requesting more forces to polish than direction [11-20]. In conclusion, the main achievements that contribute to the field can be summarized as follows: the atomistic wear mechanisms of sliding and rolling motions, material removal, and the role of rolling motion at the sub-nanoscale during the ultrafine flat polishing process.

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Section: Methodsmentioning

confidence: 99%

Section: Effect Of Abrasive Size and Orientationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Atomistic wear mechanisms and deformation evolution in polishing

Fang

Nguyen

2020

Preprint

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PL Intensity and Life-Time Enhancements of the n-GaN Light-Emitting Diode During the Device Fabrication

Chen¹,

Chen²,

Lai³

et al. 2016

TOMSJ

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Abstract:In this study, a thermal annealing process was used for evaluating the recovering effect of the surface bombardment in the plasma etching process. After inductively coupled plasma (ICP) etching, the n-GaN samples were heated and annealed in an N 2 ambient, which influenced the electrical and photonic characteristics of the devices under test. Eventually, it showed that the resistance improved after the annealing treatment, particularly at a temperature of 550 °C. Furthermore, photoluminescence (and emission-intensity degradation) measurements yielded the same results for these n-GaN LED samples, which increased to 200% (8%) of that of a nonannealing reference group at this annealing temperature. However, this annealing treatment did not completely repair the luminescence intensity and emission life-time because of the formation of deep-level point defects on the n-GaN sample surface during the fabrication process.

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Atomically smooth gallium nitride surfaces generated by chemical mechanical polishing with non-noble metal catalyst(Fe-N<inf>x</inf>/C) in acid solution

Cited by 2 publications

References 38 publications

Atomistic wear mechanisms and deformation evolution in polishing

Atomistic wear mechanisms and deformation evolution in polishing

PL Intensity and Life-Time Enhancements of the n-GaN Light-Emitting Diode During the Device Fabrication

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