Atomic structure of the (4×3) reconstructed InGaAs monolayer on GaAs(001)

Eisele, H.; Höpfner, Britta; Prohl, Christopher; Grabowski, J.; Dähne, M.

doi:10.1016/j.susc.2009.11.018

Cited by 16 publications

(7 citation statements)

References 36 publications

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“…For the bare GaSb(001) surface a couple of different reconstructions such as the b2ð2 Â 4Þ or different (4 Â 3) ones were reported [22,24]. Recently, also for InAs/GaAs(001) system a new (4 Â 3) reconstruction was found [25]. From these investigations, especially the theoretical calculations by density functional theory, the surface energies for both system are found to be in the same range as for InAs/GaAs.…”

Section: Calculation Of the Critical Thicknessmentioning

confidence: 83%

Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth

Eisele

Dähne

2012

Journal of Crystal Growth

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Section: Calculation Of the Critical Thicknessmentioning

confidence: 83%

Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth

Eisele

Dähne

2012

Journal of Crystal Growth

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“…Their RHEED results indicate that the surface in InAs/GaAs changes its structure from substrate GaAs(001)-c(4 × 4) to InAs(001)-(2 × 4) via (1 × 3)/(2 × 3) WL with increase of InAs coverage over the temperature range of 350-500 • C. Grabowski et al [27] observed a complete transition into (2 × 3) at InAs coverage of 0.76 ± 0.07 monolayer (ML) with many missing dimers at 450 • C in STM. Eisele et al [28] found that the (4 × 3) surface unit cells are arranged either in-line or brick-lined at about 2/3 ML of InAs deposited on the GaAs(001)-c(4 × 4) surface. Moreover, Konishi and Tsukamoto [29] found that the domains of (1 × 3)/(2 × 3) and (2 × 4) are distributed in an ordered pattern closely related to the density of QD precursors just after nucleation on the basis of in-situ STM observations.…”

Section: Hetero-epitaxial Growth Of Inas On Gaasmentioning

confidence: 99%

Recent Progress in Computational Materials Science for Semiconductor Epitaxial Growth

Akiyama

2017

Crystals

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Recent progress in computational materials science in the area of semiconductor epitaxial growth is reviewed. Reliable prediction can now be made for a wide range of problems, such as surface reconstructions, adsorption-desorption behavior, and growth processes at realistic growth conditions, using our ab initio-based chemical potential approach incorporating temperature and beam equivalent pressure. Applications are examined by investigating the novel behavior during the hetero-epitaxial growth of InAs on GaAs including strain relaxation and resultant growth mode depending growth orientations such as (111)A and (001). Moreover, nanowire formation is also exemplified for adsorption-desorption behaviors of InP nanowire facets during selective-area growth. An overview of these issues is provided and the latest achievement are presented to illustrate the capability of the theoretical-computational approach by comparing experimental results. These successful applications lead to future prospects for the computational materials design in the fabrication of epitaxially grown semiconductor materials.

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“…Grabowski et al observed a complete transition into (2 × 3) mainly consisting of (4 × 3) and (2 × 4) domains at InAs coverage θ = 0.76 ± 0.07 monolayer (ML) at 450 °C in scanning tunneling microscopy (STM). Eisele et al found that the (4 × 3) surface unit cells are arranged either in‐line or brick‐lined at about 2/3 ML of InAs deposited on the GaAs(001)‐c(4 × 4) surface. Moreover, Konishi and Tsukamoto found that the domains of (1 × 3)/(2 × 3) and (2 × 4) are distributed in an ordered pattern closely related to the density of QD precursors just after nucleation on the basis of in‐situ STM observations.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)

Akiyama

Nakamura

et al. 2018

Phys. Status Solidi A

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Surface reconstructions of submonolayer InAs grown on GaAs(001) are investigated using ab initio pseudopotential calculations. Decreasing As chemical potential, calculated formation energies as a function of As chemical potential reveals that the surface reconstructions change from (4 Â 3) with one In-As and two As dimers at InAs coverage θ ¼ 0.71 monolayer (ML) to (2 Â 4) at θ ¼ 1.38 ML via c(4 Â 4) with two In-As and one As dimers at θ ¼ 0.88 ML. It should be noted that the (4 Â 3) with two In-As and one As dimers is less stable than the c(4 Â 4) with the same dimer constituents. The c(4 Â 4) with two In-As and one As dimers is still stable even due to the lattice constraint of GaAs that tend to destabilize c(4 Â 4) and (2 Â 4) but stabilize many (4 Â 3) phases. Consequently, the newly found c(4 Â 4) is an intermediate phase to form the (2 Â 4) domain on the (4 Â 3) surface in InAs/GaAs(001). status solidi physica a www.advancedsciencenews.com www.pss-a.com

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Atomic structure of the (4×3) reconstructed InGaAs monolayer on GaAs(001)

Cited by 16 publications

References 36 publications

Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth

Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth

Recent Progress in Computational Materials Science for Semiconductor Epitaxial Growth

Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)

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