Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth

Eisele, H.; Dähne, M.

doi:10.1016/j.jcrysgro.2011.10.037

Cited by 12 publications

(7 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This reduced indium concentration indicates a mass transfer from the wetting layer into the quantum dots, resulting in a lower indium content at the positions 3, 5, and 7 ML, where the capping starts. Note that the nominal total deposition of 6 ML is close to the critical thickness of 6:4 6 0:8 ML, at which quantum dot formation starts for In 0:5 Ga 0:5 As =GaAs, 28 corroborating the above conclusions.…”

supporting

confidence: 80%

“…This is consistent with critical thickness for QD evolution for pure InAs deposition. 28 In the 18 ML case, we find 2:460:3 ML of pure InAs material within the WL. This indicates that the gradient of strain energy is reduced for low indium concentrations ( 15%) present in the WL of the 18 ML case, leading to the characteristic linear decrease of the indium concentration within the WL [Fig.…”

mentioning

confidence: 75%

See 1 more Smart Citation

Reverse mass transport during capping of In0.5Ga0.5As/GaAs quantum dots

Eisele

Ebert

Liu

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

The rates of indium mass transport between the wetting layer, the quantum dots, and the capping layer are derived from the indium distributions probed by cross-sectional scanning tunneling microscopy of the In 0:5 Ga 0:5 As=GaAs quantum dot system. During capping, a lateral backsegregation from the quantum dots toward the wetting layer is found, reversing the Stranski-Krastanov growth mode during quantum dot formation. This lateral back-segregation critically affects the resulting indium distribution in the wetting layer, the apparent segregation coefficients as well as the quantum dot shape. Furthermore, the strain effect on the segregation coefficient is quantified. V

show abstract

supporting

confidence: 80%

mentioning

confidence: 75%

Reverse mass transport during capping of In0.5Ga0.5As/GaAs quantum dots

Eisele

Ebert

Liu

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…To investigate the QD growth mode, we prepared a sample set with increasing In 0.5 Ga 0.5 Sb coverage, after deposition of a 5 ML-thick GaAs interlayer and 1s-Sb-flush. The Sb-irradiation prior to In 0.5 Ga 0.5 Sb deposition is likely to promote an exchange of Sb atoms for As atoms on the surface [15][16][17] which can help to increase the Sb content in QDs. Antimony as a large atom may also act as a surfactant, influencing growth generally in many ways, 18-21 modifying, for example, the diffusion length of surface atoms, but also the QD formation.…”

mentioning

confidence: 99%

Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Sala

Stracke

Selve

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

Stranski-Krastanov (SK) growth of In0.5Ga0.5Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 109 to 2 × 1011 cm−2 depending on material deposition and Sb-flush time. When In0.5Ga0.5Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.

show abstract

“…The initial GaSb QD density, which is about 120 μm À 2 , decreases to less than 30 μm À 2 , while the average QD height increases about 1.5 times (from 9.5 nm for x¼0.0 to 14.5 nm for x¼ 0.07) when the In 0.07 Ga 0.93 As layer is inserted. These observations are attributed to the change of initial surface energy, interface energy as well as the strain energy of the QD system [11,12].…”

Section: Resultsmentioning

confidence: 97%