Atomic structure of random and c-axis oriented YMnO3 thin films deposited on Si and Y2O3/Si substrates

Abstract

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Synthesis of orthorhombic rare-earth manganite thin films by a novel chemical solution route

“…Transition metal and rare-earth manganites have been extensively studied in the single crystal form, processed by floating zone method [25,26], as well as polycrystalline samples, processed by conventional ceramic or solgel methods [27,28], and thin films, prepared by several deposition techniques, such as pulsed laser deposition [29,30], RF sputtering or RF magnetron sputtering [15,[31][32][33], molecular beam epitaxy [34,35], metal-organic chemical vapor deposition [36], and chemical solution deposition [22,[37][38][39][40][41]. Among these methods, chemical solution deposition is one of the more promising techniques, because it provides higher composition control, lower processing temperatures, shorter fabrication time, and relative low cost [41].…”

“…Among these methods, chemical solution deposition is one of the more promising techniques, because it provides higher composition control, lower processing temperatures, shorter fabrication time, and relative low cost [41]. It has been reported several chemical solution routes for processing transition metal and rare-earth manganite thin films, i.e., YMnO 3 [22,29,[31][32][33][34][37][38][39][40][41][42][43], GdMnO 3 [13,14,17], BiMnO 3 [5,17], DyMnO 3 [13,17] and LaMnO 3 [44,45]. However, it has been not reported a general chemical solution route for processing rare-earth and transition metal manganite thin films yet.…”

Epitaxial and oriented YMnO3 film growth by pulsed laser deposition

“…Imada et al [5] and Ito et al [7] reported that YMnO 3 films synthesized by MBE and PLD on (1 1 1)Pt/(0 0 0 1)Al 2 O 3 and (1 1 1)Y 2 O 3 /(1 1 1)Si grew epitaxially and displayed the full width half maximum (FWHM) of about 0.7 in X-ray diffraction rocking curve. However, most films displayed a polycrystalline property with a random orientation, but some films deposited with post-annealing showed c-axis texture [13,14,19]. The degree of crystallinity of the YMnO 3 film depends on many kinds of parameters when it grows on a substrate.…”

“…For last few years, the YMnO 3 thin film has attracted interest as a candidate for application to the nonvolatile ferroelectric random access memory because YMnO 3 has good retention property [4][5][6][7]. YMnO 3 films have been synthesized by various techniques such as molecular beam epitaxy (MBE) [5,6], pulsed laser deposition (PLD) [7][8][9][10][11][12], sputtering [13][14][15], and chemical solution routes [16][17][18][19][20][21][22]. Imada et al [5] and Ito et al [7] reported that YMnO 3 films synthesized by MBE and PLD on (1 1 1)Pt/(0 0 0 1)Al 2 O 3 and (1 1 1)Y 2 O 3 /(1 1 1)Si grew epitaxially and displayed the full width half maximum (FWHM) of about 0.7 in X-ray diffraction rocking curve.…”

Effect of epitaxial strain on the magneto-electric coupling of YMnO3 thin films

“…Various techniques, including chemical solution deposition (CSD) 19 , sol-gel, and metal-organic chemical vapor deposition (MOCVD) 20 , molecular beam epitaxy (MBE) 21 , sputtering 22 and pulsed laser deposition (PLD) 23 etc. have been employed successfully to fabricate YMnO 3 thin films.…”