Epitaxial and oriented YMnO3 film growth by pulsed laser deposition

Dho, Joonghoe; Leung, Chi Wah; MacManus‐Driscoll, Judith L.; Blamire, M. G.

doi:10.1016/j.jcrysgro.2004.04.028

Cited by 87 publications

(66 citation statements)

References 24 publications

(26 reference statements)

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“…The lattice parameters of hexagonal YMnO 3 and YInO 3 are a = 6.12 Å and c = 11.4 Å and a = 6.26 Å & c = 12.2 Å respectively. The deposited film grows along c-orientation with (0001) reflection similar to that of YMnO 3 thin film known in literature 8 indicating that the film may have the same hexagonal phase. The grown thin film has an out-of-plane lattice parameter value, estimated from the position of the (0004) peak, of 12.1396 Å.…”

confidence: 69%

“…It is known from the literature that hexagonal YMnO 3 thin films tend to have a larger c value even in the presence of the in-plane tensile stress (35% mismatch) and it is attributed to the weakening of inter plane and intra plane ionic bond strength due to the in-plane tensile stress. 8 Note that the substrate temperature and post deposition annealing seems to be important for the formation of the hexagonal phase, since for example the hexagonal phase does not form at a substrate temperature below 800 • C. The temperature dependent magnetic measurement shows the paramagnetic behavior and the absence of an antiferromagnetic transition in the measured temperature range. The antiferromagnetic transition temperature of 72 K for YMnO 3 is reported to shift towards a lower temperature with In 3+ ion substitution.…”

confidence: 92%

“…Even though thin film growth techniques offer a platform to control crystal structure through substrate lattice pressure and growth conditions, the hexagonal manganite thin films grow in a very narrow range of condition. 8 In most cases it forms a polycrystalline film. In general, the substrate temperature range used for growth was 650-850 • C. Further post-deposition annealing seems to stabilize the growth along the c-axis.…”

confidence: 99%

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Growth, optical and magnetic behavior of YMn0.35In0.65O3 thin film

et al. 2012

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The growth of YMn0.35In0.65O3 thin films and their optical and magnetic behavior are reported. The YMn0.35In0.65O3 thin film grows along the (0001) orientation with hexagonal structure similar to YMnO3 on c-plane sapphire. The film shows paramagnetic behavior in the temperature range measured. The film exhibits a blue color due to the electronic transition in the red-green region of the visible spectrum. The development of such a relatively low cost, eco-friendly and highly stable chromophore can be used as a blue filter layer in color filter array

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confidence: 69%

confidence: 92%

confidence: 99%

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Growth, optical and magnetic behavior of YMn0.35In0.65O3 thin film

et al. 2012

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confidence: 99%

“…This phase can be also stabilized in YMO thin films under compressive epitaxial stress. [8][9][10] Whereas the phase stabilization is documented in these references, the physical properties of orthorhombic YMO films are not reported.We report here on the growth and magnetic characterization of AF perosvkite YMO thin films. Epitaxial films were deposited on SrTiO 3 ͑STO͒ substrates having different orientations; we will show that this strategy allows selection of the YMO crystal out-of-plane orientation.…”

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confidence: 99%

Exchange bias between magnetoelectric YMnO3 and ferromagnetic SrRuO3 epitaxial films

Martí

Sánchez

Fontcuberta

et al. 2006

Journal of Applied Physics

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Orthorhombic YMnO 3 ͑YMO͒ epitaxial thin films were deposited on SrTiO 3 ͑STO͒ single-crystal substrates. We show that the out-of-plane texture of the YMO films can be tailored using STO substrates having ͑001͒, ͑110͒, or ͑111͒ orientations. We report on the magnetic properties of the YMO͑010͒ films grown on STO͑001͒ substrates. The dependence of the susceptibility on the temperature indicates that the films are antiferromagnetic below the Néel temperature ͑around 35 K͒. Orthorhombic YMO͑010͒ films were also deposited on an epitaxial buffer layer of ferromagnetic and metallic SrRuO 3 ͑SRO͒. The magnetic hysteresis loops of SRO show exchange bias at temperatures below the Néel temperature of YMO. These results confirm that the YMO films are antiferromagnetic and demonstrate that magnetoelectric YMO can be integrated in functional epitaxial architectures. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2167333͔ INTRODUCTIONMultifunctional materials research is of fundamental importance for the next generation of devices of relevance in several areas of science and technology, including magnetoelectronics. Biferroic materials show the coexistence of ferroelectricity and magnetic order and are currently receiving much attention ͑see two recent reviews in Refs. 1 and 2͒. One of the most studied materials is the hexagonal phase of YMnO 3 ͑YMO͒, which is ferroelectric and antiferromagnetic ͑AF͒. 3 The orthorhombic phase of YMO is not ferroelectric, but substantial changes of the dielectric constant close to the AF order temperature have been reported. 4 The orthorhombic phase of YMO is metastable in bulk, and it forms only when high pressures are applied 4 or by soft chemistry techniques. 5,6 YMO belongs to the family of RMnO 3 compounds, where R is a trivalent cation. These compounds can present either hexagonal or orthorhombic structure, depending on the size of the R 3+ cation. 7 Specific volume is lower in the perovskite ͑orthorhombic͒ phase than in the hexagonal, and the orthorhombic phase can be stabilized in bulk samples under high pressures. This phase can be also stabilized in YMO thin films under compressive epitaxial stress. [8][9][10] Whereas the phase stabilization is documented in these references, the physical properties of orthorhombic YMO films are not reported.We report here on the growth and magnetic characterization of AF perosvkite YMO thin films. Epitaxial films were deposited on SrTiO 3 ͑STO͒ substrates having different orientations; we will show that this strategy allows selection of the YMO crystal out-of-plane orientation. This is of fundamental importance towards device design since it makes possible having films with precisely controlled magnetic, ferroelectric, or magnetoelectric axis orientation. We present magnetic measurements of the films grown on STO͑001͒, confirming their AF character below the Néel temperature, T N ϳ 35 K. Moreover, we report also on the growth and magnetic characterization of bilayers with YMO and SrRuO 3 ͑SRO͒, a ferromagnetic and metallic oxide below ϳ150 K....

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