Atomic-structure characterization of a H:GaAs(110) surface by time-of-flight ion-scattering spectrometry

Gayone, J. E.; Pregliasco, R. G.; Sánchez, Esteban; Grizzi, O.

doi:10.1103/physrevb.56.4194

Cited by 14 publications

(7 citation statements)

References 19 publications

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“…When an adsorbed atom bonds to one of the buckled dimmer, it operates to release the buckling, as hydrogen adsorption on the GaAs(110) surface lifts the buckling of the surface Ga-As dimer. This effect of H adsorption is supported experimentally [20][21][22][23][24][25][26] and theoretically. [27][28][29][30][31][32] Adsorption on the InAs(110) surface leads to donor-type surface states above but near the CBM.…”

Section: Introductionsupporting

confidence: 55%

Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

2012

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Adsorption on an n-type InAs surface often induces a gradual formation of a carrieraccumulation layer at the surface. By means of high-resolution photoelectron spectroscopy (PES), Betti et al. made a systematic observation of subbands in the accumulation layer in the formation process. Incorporating a highly nonparabolic (NP) dispersion of the conduction band into the local-density-functional (LDF) formalism, we examine the subband structure in the accumulation-layer formation process. Combining the LDF calculation with the PES experiment, we make an accurate evaluation of the accumulated-carrier density, the subband-edge energies, and the subband energy dispersion at each formation stage. Our theoretical calculation can reproduce the three observed subbands quantitatively. The subband dispersion, which deviates downward from that of the projected bulk conduction band with an increase in wave number, becomes significantly weaker in the formation process.

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Section: Introductionsupporting

confidence: 55%

Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

2012

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“…3,4 These temperatures do vary with experimental conditions, 5 but are safely above those used in many surface science investigations. Molecular hydrogen does not dissociate on III-V semiconductor surfaces themselves, 6 but it does so readily in the presence of a hot filament, such as an ion gauge. In addition, many of the metals and metal oxides used in reaction vessels, vacuum chambers, sample holders, substrates, etc.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen on III-V (110) surfaces: Charge accumulation and STM signatures

et al. 2013

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The behavior of hydrogen on the 110 surfaces of III-V semiconductors is examined using ab initio density functional theory. It is confirmed that adsorbed hydrogen should lead to a charge accumulation layer in the case of InAs, but shown here that it should not do so for other related III-V semiconductors. It is shown that the hydrogen levels due to surface adsorbed hydrogen behave in a material dependent manner related to the ionicity of the material, and hence do not line up in the universal manner reported by others for hydrogen in the bulk of semiconductors and insulators. This fact, combined with the unusually deep point conduction band well of InAs, accounts for the occurrence of an accumulation layer on InAs(110) but not elsewhere. Furthermore, it is shown that adsorbed hydrogen should be extremely hard to distinguish from native defects (particularly vacancies) using scanning tunneling and atomic force microscopy, on both InAs(110) and other III-V (110) surfaces.

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“…However, when a hydrogen ͑H͒ atom bonds to one of the relaxed dimer, it operates to remove the relaxation of the dimer, which results in the appearance of a midgap surface state from the other atom of the dimer. The fact that H adsorption removes the surface relaxation is supported both experimentally [12][13][14][15][16][17][18] and theoretically. [19][20][21][22][23][24] The theoretical calculation for the case of submonolayer H coverages in Refs.…”

Section: Introductionmentioning

confidence: 56%

Evolution of elementary excitations at a doped polar semiconductor surface in a depletion-layer formation process

Inaoka

2001

Phys. Rev. B

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We investigate the evolution of elementary excitations at a doped polar semiconductor surface in a depletion-layer formation process. The elementary excitations analyzed are two coupled plasmon-phonon modes and a surface optical-phonon mode involving screening charges. Surface excitations of free carriers are calculated by taking account of the Coulomb interaction between carriers, the dynamical exchange-correlation effect, and the coupling with surface polar phonons, on the basis of thermal-equilibrium states calculated self-consistently by the local-density approximation. We focus our attention on the coupling character and the spatial structure of each surface-excitation mode, as well as the energy dispersion and the energy-loss intensity involved in the excitation. The induced charge-density distribution in the excitation mode is composed of a carrier component due to carrier density fluctuation, a phonon component arising from longitudinal polarphonon polarization, and two on-surface components originating from the termination of the polar phonon and background polarization at the surface. The coupling character is elucidated by the phase relation and the amplitude ratio among these induced charge components. The spatial structure is visualized by the contour map of the induced charge-density distribution. We follow the variation in the coupling character and the spatial structure in the depletion-layer formation process. Our analysis gives a clear explanation of the variation in each of the three loss peaks in the electron energy-loss spectrum.

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Atomic-structure characterization of a H:GaAs(110) surface by time-of-flight ion-scattering spectrometry

Cited by 14 publications

References 19 publications

Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

Hydrogen on III-V (110) surfaces: Charge accumulation and STM signatures

Evolution of elementary excitations at a doped polar semiconductor surface in a depletion-layer formation process

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