2020
DOI: 10.1021/acs.jpclett.0c01126
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Atomic Structure and Electronic Properties of Intermetallic CaBi2 Thin Films

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Cited by 5 publications
(2 citation statements)
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“…In this Letter, we report the fabrication of epitaxial Ag 2 Se thin films grown on TiO 2 -terminated SrTiO 3 (STO)(001) substrates together with characterization of their atomic structure and electronic properties by using a state-of-the-art integration of molecular beam epitaxy (MBE) and STM/S techniques. MBE is a powerful tool for the fabrication of specific constituent layers of nominally stoichiometric ultrathin films . More specifically, by controlling the Se-to-Ag flux ratio, we obtained a monoclinic-structured Ag 2 Se film with different growth directions.…”
mentioning
confidence: 99%
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“…In this Letter, we report the fabrication of epitaxial Ag 2 Se thin films grown on TiO 2 -terminated SrTiO 3 (STO)(001) substrates together with characterization of their atomic structure and electronic properties by using a state-of-the-art integration of molecular beam epitaxy (MBE) and STM/S techniques. MBE is a powerful tool for the fabrication of specific constituent layers of nominally stoichiometric ultrathin films . More specifically, by controlling the Se-to-Ag flux ratio, we obtained a monoclinic-structured Ag 2 Se film with different growth directions.…”
mentioning
confidence: 99%
“…MBE is a powerful tool for the fabrication of specific constituent layers of nominally stoichiometric ultrathin films. 32 More specifically, by controlling the Se-to-Ag flux ratio, we obtained a monoclinic-structured Ag 2 Se film with different growth directions. We found that the growth of Ag 2 Se thin films follows a Volmer−Weber mode with an amorphous wetting layer.…”
mentioning
confidence: 99%