2021
DOI: 10.1007/s12274-021-3735-y
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Flexible atomic buckling and homogeneous edge states in few-layer Bi(110) films

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Cited by 6 publications
(12 citation statements)
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References 33 publications
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“…The observed preference for full bilayer, i.e. even monolayer heights is in line with earlier studies [23]. In particular, the 2 BL high islands are very stable as they show a comparatively wide band gap in scanning tunneling spectroscopy [23].…”
Section: Bi(110) Majority Islands Elongated In the Graphene Armchair ...supporting
confidence: 91%
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“…The observed preference for full bilayer, i.e. even monolayer heights is in line with earlier studies [23]. In particular, the 2 BL high islands are very stable as they show a comparatively wide band gap in scanning tunneling spectroscopy [23].…”
Section: Bi(110) Majority Islands Elongated In the Graphene Armchair ...supporting
confidence: 91%
“…even monolayer heights is in line with earlier studies [23]. In particular, the 2 BL high islands are very stable as they show a comparatively wide band gap in scanning tunneling spectroscopy [23]. These so called 'magic' heights are related to the electronic structure arising from quantum confinement effects.…”
Section: Bi(110) Majority Islands Elongated In the Graphene Armchair ...supporting
confidence: 89%
See 1 more Smart Citation
“…Figures 1(a)-(e) show the atomic structure, which includes paired layers of atoms in the BP-like structure. Interestingly, when grown on graphite, it has been reported that structures with single layer atomic steps are observed [24] which suggests that subtle differences in interactions between the Bi overlayer and underlying substrate can cause a transition between the A7 and A17 structures. Figures 1(f) and (g) show the typical morphology of the islands in our experiments, which are entirely consistent with the paired-layer BP-like structure: in particular, singlelayer atomic steps are never observed.…”
Section: Resultsmentioning
confidence: 99%
“…β-Bi structures have been thoroughly investigated [10][11][12][13][14][15][16][17][18], and it is found the nature of the ESs varies depending on the substrate on which it is grown. α-Bi structures were grown on several substrates (Si(111) [19], Ge(111) [20], the superconductor NbSe 2 [21], graphene supported by SiC [22][23][24][25], MoS 2 [26], TiSe 2 [27] and highly oriented pyrolytic graphite (HOPG) [3,28]), but less is known about their topological properties and ESs. Calculations suggest a strong dependence of the topology on the atomic buckling at the α-Bi surface i.e.…”
Section: Introductionmentioning
confidence: 99%