Atomic scale study of the degradation mechanism of boron contaminated hafnium oxide

Abstract

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Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

“…28 However, the notable thing is that the slope of the B 2 O 3 /up-SiO 2 lms is higher than that of SiO 2 lms, indicating the V FB shi to the (À) direction. This result agrees well with that in previous publications, which could be attributed to two possible reasons: (i) the presence of well-known positive xed charges in B 2 O 3 17,[29][30][31] and (ii) the formation of electric dipoles formed at the B 2 O 3 /SiO 2 interface. [32][33][34] Particularly, concerning the latter mechanism, Kita et al paid attention to the oxygen behavior at the interface, where the oxygen density difference is a driving force of the oxygen movement.…”