Atomic-scale studies of hydrogenated semiconductor surfaces

Hydrogen on III-V (110) surfaces: Charge accumulation and STM signatures

“…For example, in GaAs the energy barrier has been reported as high as 1.43 35 Si(111)-p(7 × 7) (Refs. 36 and 37), and Si(100)-p(2 × 1), 7,38,39 As terminated GaAs(100)-c(4 × 4) (where it is visible at temperatures up to 400…”

“…7 It can stabilize polar (100) surfaces. 8 It is known to be the cause of supposedly "intrinsic" n-type doping in ZnO (Ref.…”

Characterization of PTCDA nanocrystals on Ge(001):H-(2×1) surfaces

“…For example, in case of metal surfaces such a scenario is realized by means of few monolayers of insulator, like NaCl [5][6][7][8][9][10][11][12][13], for semiconductor surfaces it might be either few monolayers of insulator, like KBr on InSb [14,15], or a single layer of atomic hydrogen, e.g. Si:H and Ge:H surfaces [16][17][18][19][20]. The buffer layer dramatically enhances mobility of adsorbed molecular species and eventually may ease their selfassembly and formation of molecular nanocrystals [9][10][11]20,21].…”

Adsorption of silicon on Au(110): An ordered two dimensional surface alloy

“…The experiments were performed on the same crystal in two different chambers in ISMO-Orsay (Ref. 37) and at the University of Zurich. 38 The Au(110) sample was cleaned with several sputtering cycles (600 eV Ar þ ions, P ¼ 5 Â 10 À5 Torr) and annealing at 450 C until a sharp p(2 Â 1) LEED pattern, reminiscent for the Au(110) missing row reconstruction, was obtained.…”